Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898187
F. Kerisit, M. J. Lefevre, B. Domengès, W. Prellier, Michael Obein
In order to reduce costs and improve the bonding process, silver has been recently introduced as an alternative to common bonding wire metals (gold, aluminum, copper), leading to new failure analysis issues. This study compares the efficiency of wet and dry chemistries for decapsulation on three Ag-based alloy wires. Introduction New developments of silver alloy bonding wire have emphasized specific problems due to silver alloy properties. Whereas this new type of wiring materials seemed to fulfill most challenges, like physical properties and reliability [1,2], it was suggested that epoxy molding compound (EMC) should be adapted in order to ease decapsulation[3]. Indeed, afterthe packaging industry moved from gold to copper wires, the failure analysis community had to come up with new decapsulation techniques [4,5]. Again, a new type of bonding will raise new problems of decapsulation. Furthermore, people facing failure analysis cases do not always have all required information on the type of EMC and the true composition of the bonding wires. Twomajor techniques of decapsulation regarding wirebonded devices are known: wet (acid) and dry etching (plasma). LASER ablation or milling are used for preopening, This study will compare the capabilities of these techniques on three different types of Ag-based wiring integrated circuits(IC).
{"title":"Decapsulation of silver-alloy wire-bonded devices","authors":"F. Kerisit, M. J. Lefevre, B. Domengès, W. Prellier, Michael Obein","doi":"10.1109/IPFA.2014.6898187","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898187","url":null,"abstract":"In order to reduce costs and improve the bonding process, silver has been recently introduced as an alternative to common bonding wire metals (gold, aluminum, copper), leading to new failure analysis issues. This study compares the efficiency of wet and dry chemistries for decapsulation on three Ag-based alloy wires. Introduction New developments of silver alloy bonding wire have emphasized specific problems due to silver alloy properties. Whereas this new type of wiring materials seemed to fulfill most challenges, like physical properties and reliability [1,2], it was suggested that epoxy molding compound (EMC) should be adapted in order to ease decapsulation[3]. Indeed, afterthe packaging industry moved from gold to copper wires, the failure analysis community had to come up with new decapsulation techniques [4,5]. Again, a new type of bonding will raise new problems of decapsulation. Furthermore, people facing failure analysis cases do not always have all required information on the type of EMC and the true composition of the bonding wires. Twomajor techniques of decapsulation regarding wirebonded devices are known: wet (acid) and dry etching (plasma). LASER ablation or milling are used for preopening, This study will compare the capabilities of these techniques on three different types of Ag-based wiring integrated circuits(IC).","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133094412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898168
J. Lee, Sungsoon Choi, K. Lee
As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.
{"title":"Microstructural approach to failure analysis of thin film transistors","authors":"J. Lee, Sungsoon Choi, K. Lee","doi":"10.1109/IPFA.2014.6898168","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898168","url":null,"abstract":"As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133181762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898205
R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, Y. Chen, A. Belmonte, S. Cosemans, B. Govoreanu, D. Wouters, P. Roussel, G. Kar, G. Groeseneken, M. Jurczak
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.
{"title":"Hourglass concept for RRAM: A dynamic and statistical device model","authors":"R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, Y. Chen, A. Belmonte, S. Cosemans, B. Govoreanu, D. Wouters, P. Roussel, G. Kar, G. Groeseneken, M. Jurczak","doi":"10.1109/IPFA.2014.6898205","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898205","url":null,"abstract":"In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132811250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898190
P. Laskowski, M. Olszacki, M. Al Bahri, P. Pons, M. Jasiorski
The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.
{"title":"High energy electron degradation of the bonding connections","authors":"P. Laskowski, M. Olszacki, M. Al Bahri, P. Pons, M. Jasiorski","doi":"10.1109/IPFA.2014.6898190","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898190","url":null,"abstract":"The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115027102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898158
S. Chef, S. Jacquir, P. Perdu, K. Sanchez, S. Binczak
Photon emission microscopy and Time Resolved Imaging have proved their efficiency for defect localization on VLSI. A common process to find defect candidate locations is to draw a comparison between acquisitions on a normally working device and a faulty one. In order to be accurate and meaningful, this method requires that the acquisition scene remains the same between the two parts. In practice, it can be difficult to set. In this paper, a method to correct position by affine matrix transformation is suggested. It is based on image features detection, description and matching and affine transformation estimation.
{"title":"Spatial correction in dynamic photon emission by affine transformation matrix estimation","authors":"S. Chef, S. Jacquir, P. Perdu, K. Sanchez, S. Binczak","doi":"10.1109/IPFA.2014.6898158","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898158","url":null,"abstract":"Photon emission microscopy and Time Resolved Imaging have proved their efficiency for defect localization on VLSI. A common process to find defect candidate locations is to draw a comparison between acquisitions on a normally working device and a faulty one. In order to be accurate and meaningful, this method requires that the acquisition scene remains the same between the two parts. In practice, it can be difficult to set. In this paper, a method to correct position by affine matrix transformation is suggested. It is based on image features detection, description and matching and affine transformation estimation.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116091960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898171
C. Bergès, Y. Chandon, Pierre Soufflet
In the automotive industry, risk analysis are performed as soon as quality incidents with the same defect signature are reported from the field. The tools used may be the defect distribution modeling, used for the failure rate estimations required by ISO26262 standard, but adapted to the stronger constraints of quality issues. One of these constraints is the low number of failing parts on which a modeling has to be performed. Some case studies seemed to indicate that it is possible to assert the assumption of a constant failure rate when there are a small number of defects. A novel strategy to assess risk has been developed from this number of defects.
{"title":"Reliability analysis from field data and prediction models for customer risk assessments: Case studies and strategy","authors":"C. Bergès, Y. Chandon, Pierre Soufflet","doi":"10.1109/IPFA.2014.6898171","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898171","url":null,"abstract":"In the automotive industry, risk analysis are performed as soon as quality incidents with the same defect signature are reported from the field. The tools used may be the defect distribution modeling, used for the failure rate estimations required by ISO26262 standard, but adapted to the stronger constraints of quality issues. One of these constraints is the low number of failing parts on which a modeling has to be performed. Some case studies seemed to indicate that it is possible to assert the assumption of a constant failure rate when there are a small number of defects. A novel strategy to assess risk has been developed from this number of defects.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898150
S. Y. Tan, K. K. Ng, S. Y. Gan, C. Sin
Hand probing is the most common technique being applied in Time Domain Reflectometry (TDR) measurement. It is a simple and easy method, but it produced instability on overall signal. Therefore, a new test fixture is designed to maximize its reproducibility. Repeatability test will be used to show its effectiveness on Power MOSFET. In addition, with the test fixture, the standard deviation for impedance results was σ=0.12 based on the same part for eight times measurement, compare to σ=3.26 with hand probing. Therefore a significant improvement on the repeatability test was clearly demonstrated.
{"title":"An innovative method to overcome signal instability during TDR measurement of power MOSFET","authors":"S. Y. Tan, K. K. Ng, S. Y. Gan, C. Sin","doi":"10.1109/IPFA.2014.6898150","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898150","url":null,"abstract":"Hand probing is the most common technique being applied in Time Domain Reflectometry (TDR) measurement. It is a simple and easy method, but it produced instability on overall signal. Therefore, a new test fixture is designed to maximize its reproducibility. Repeatability test will be used to show its effectiveness on Power MOSFET. In addition, with the test fixture, the standard deviation for impedance results was σ=0.12 based on the same part for eight times measurement, compare to σ=3.26 with hand probing. Therefore a significant improvement on the repeatability test was clearly demonstrated.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121070292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898125
Miao Wu, Y. Che
In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.
{"title":"A stain chemical etching rate study and used to detect implant defect","authors":"Miao Wu, Y. Che","doi":"10.1109/IPFA.2014.6898125","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898125","url":null,"abstract":"In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127195032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898182
A. Bag, M. K. Hota, S. Mallik, C. Maiti
Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the `learning' processes.
{"title":"Observation of long term potentiation in papain-based memory devices","authors":"A. Bag, M. K. Hota, S. Mallik, C. Maiti","doi":"10.1109/IPFA.2014.6898182","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898182","url":null,"abstract":"Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the `learning' processes.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121623090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898122
W. Chang, Li-Gong Cin, W. Yeh, Po-Ying Chen
The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.
{"title":"Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width","authors":"W. Chang, Li-Gong Cin, W. Yeh, Po-Ying Chen","doi":"10.1109/IPFA.2014.6898122","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898122","url":null,"abstract":"The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114309732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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