Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307348
A. Nakagawa, N. Yasuhara, I. Omura, Y. Yamaguchi, T. Ogura, T. Matsudai
Silicon on Insulator technology is promising for high voltage power IC applications. The required SOI layer thickness can be reduced if a large portion of the applied voltage is sustained by the bottom insulator layer. Combination of SOI and trenches or LOCOS has merits of simplified device isolation and high device packing density. Thin SOI layer will realize high-speed switching in high voltage devices because of the smaller amount of stored carriers. Substrate bias influences on device characteristics and potentials of SOI technology are discussed.<>
{"title":"Prospects of high voltage power ICs on thin SOI","authors":"A. Nakagawa, N. Yasuhara, I. Omura, Y. Yamaguchi, T. Ogura, T. Matsudai","doi":"10.1109/IEDM.1992.307348","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307348","url":null,"abstract":"Silicon on Insulator technology is promising for high voltage power IC applications. The required SOI layer thickness can be reduced if a large portion of the applied voltage is sustained by the bottom insulator layer. Combination of SOI and trenches or LOCOS has merits of simplified device isolation and high device packing density. Thin SOI layer will realize high-speed switching in high voltage devices because of the smaller amount of stored carriers. Substrate bias influences on device characteristics and potentials of SOI technology are discussed.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120848272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307452
M. Okamura, K. Kimura, S. Shirai, N. Yamauchi
We have designed, fabricated, and characterized a 32*32 two-dimensional photodetector array using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) TFTs integrated on a transparent substrate. This work demonstrates the feasibility of a light-transmitting two-dimensional photodetector array for use in parallel optoelectronic systems such as free-space photonic switching systems.<>
{"title":"A 32*32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate","authors":"M. Okamura, K. Kimura, S. Shirai, N. Yamauchi","doi":"10.1109/IEDM.1992.307452","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307452","url":null,"abstract":"We have designed, fabricated, and characterized a 32*32 two-dimensional photodetector array using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) TFTs integrated on a transparent substrate. This work demonstrates the feasibility of a light-transmitting two-dimensional photodetector array for use in parallel optoelectronic systems such as free-space photonic switching systems.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116320265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307312
A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin
We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<>
{"title":"A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor","authors":"A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin","doi":"10.1109/IEDM.1992.307312","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307312","url":null,"abstract":"We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122208820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307319
K. Orihara, K. Minami, T. Nakano, K. Hatano, M. Furumiya, N. Mutoh, M. Ohbo, Y. Hokari
New shunt wiring technologies for HDTV FIT-CCD image sensors have been developed. They include tungsten direct shunt wiring structure. As well as a new layout for tungsten shunt lines and aluminum bus lines. A 1-inch format 2M pixel FIT-CCD image sensor was fabricated using these technologies. A low smear level, less than -110 dB, was achieved at 1 MHz frame shift frequency. Furthermore, a 1.2*10/sup 5/ electron charge handling capability was obtained up to 1.4 MHz frame shift frequency.<>
{"title":"New shunt wiring technologies for high performance HDTV CCD image sensors","authors":"K. Orihara, K. Minami, T. Nakano, K. Hatano, M. Furumiya, N. Mutoh, M. Ohbo, Y. Hokari","doi":"10.1109/IEDM.1992.307319","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307319","url":null,"abstract":"New shunt wiring technologies for HDTV FIT-CCD image sensors have been developed. They include tungsten direct shunt wiring structure. As well as a new layout for tungsten shunt lines and aluminum bus lines. A 1-inch format 2M pixel FIT-CCD image sensor was fabricated using these technologies. A low smear level, less than -110 dB, was achieved at 1 MHz frame shift frequency. Furthermore, a 1.2*10/sup 5/ electron charge handling capability was obtained up to 1.4 MHz frame shift frequency.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116834758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307304
T. Hiramoto, N. Tamba, M. Yoshida, T. Hashimoto, T. Fujiwara, K. Watanabe, M. Odaka, M. Usami, T. Ikeda
A double polysilicon bipolar technology with high-speed, high-packing density, low power consumption, and high alpha -particle immunity has been newly developed. Bonded SOI substrates are used to improve the alpha -particle immunity, and scaled CMOS memory cells are introduced to reduce the power consumption and to increase the packing density. The cut-off frequency of the bipolar transistors is as high as 27 GHz and the area of the CMOS memory cell is 58 mu m/sup 2/. This technology is promising for application to ultra high-speed, high-density LSIs with ECL-CMOS scheme.<>
{"title":"A 27 GHz double polysilicon bipolar technology on bonded SOI with embedded 58 mu m/sup 2/ CMOS memory cells for ECL-CMOS SRAM applications","authors":"T. Hiramoto, N. Tamba, M. Yoshida, T. Hashimoto, T. Fujiwara, K. Watanabe, M. Odaka, M. Usami, T. Ikeda","doi":"10.1109/IEDM.1992.307304","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307304","url":null,"abstract":"A double polysilicon bipolar technology with high-speed, high-packing density, low power consumption, and high alpha -particle immunity has been newly developed. Bonded SOI substrates are used to improve the alpha -particle immunity, and scaled CMOS memory cells are introduced to reduce the power consumption and to increase the packing density. The cut-off frequency of the bipolar transistors is as high as 27 GHz and the area of the CMOS memory cell is 58 mu m/sup 2/. This technology is promising for application to ultra high-speed, high-density LSIs with ECL-CMOS scheme.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131558028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307533
H. Kurino, H. Hashimoto, Y. Hiruma, T. Fujimori, M. Koyanagi
The photon emission from extremely small size MOSFETs with L/sub G/=70 nm is observed for the first time. It is found that the electron temperature of the hot electrons monotonously increases while the substrate current to drain current ratio which is related to the avalanche multiplication factor initially increases and then decreases due to the latch effect caused by the parasitic bipolar transistor action as the gate length is reduced from 500 nm to 70 nm. The number of photons emitted with a higher energy has more intimate relation with the charge pumping current change caused by the hot-carrier generated interface states. It is shown that the photon emission is more effective for evaluating the hot carrier phenomenon than the substrate current when the gate length is smaller and the drain voltage is higher.<>
{"title":"Photon emission from 70 nm gate length MOSFETs","authors":"H. Kurino, H. Hashimoto, Y. Hiruma, T. Fujimori, M. Koyanagi","doi":"10.1109/IEDM.1992.307533","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307533","url":null,"abstract":"The photon emission from extremely small size MOSFETs with L/sub G/=70 nm is observed for the first time. It is found that the electron temperature of the hot electrons monotonously increases while the substrate current to drain current ratio which is related to the avalanche multiplication factor initially increases and then decreases due to the latch effect caused by the parasitic bipolar transistor action as the gate length is reduced from 500 nm to 70 nm. The number of photons emitted with a higher energy has more intimate relation with the charge pumping current change caused by the hot-carrier generated interface states. It is shown that the photon emission is more effective for evaluating the hot carrier phenomenon than the substrate current when the gate length is smaller and the drain voltage is higher.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132573909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307522
W. Jiang, U. Mishra
Hot electron emission from a planar surface has been pursued in the past two decades in both silicon and III-V compound semiconductors. Since they are majority carrier devices and have controllable material growth by MBE, emitters made from planar doped barrier (PDB) structures have the advantages of high current density and high electron emission efficiency. The authors present the emission from a new Al/sub 0.3/Ga/sub 0.7/As-GaAs PDB emitter. A PDB structure consists of a sequence of n/sup +/-i-p/sup +/(delta-doped)-i-n/sup +/ layers. The p/sup +/ delta-doped sheet is fully depleted giving rise to a triangular barrier. A positive bias applied to the surface forward biases the n/sup +/-i-p/sup +/ injecting junction and reverse biases the p/sup +/-i-n/sup +/ accelerating junction so that electrons in the n/sup +/ region are injected across the barrier into a high field region and accelerated toward the surface. Electrons with kinetic energy larger than the surface work function are then emitted. For an efficient PDB emitter, the transit distance (the total thickness of the accelerating region and the top contact layer) should be small and the accelerating voltage (the voltage drop across the accelerating region) should be large. The breakdown of the accelerating junction sets an upper limit to the field applied to the accelerating region. One way to increase the accelerating voltage and hence the electron kinetic energy, without sacrificing the small transit distance, is using materials with a higher breakdown field.<>
{"title":"A novel electron emitter with AlGaAs planar doped barrier","authors":"W. Jiang, U. Mishra","doi":"10.1109/IEDM.1992.307522","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307522","url":null,"abstract":"Hot electron emission from a planar surface has been pursued in the past two decades in both silicon and III-V compound semiconductors. Since they are majority carrier devices and have controllable material growth by MBE, emitters made from planar doped barrier (PDB) structures have the advantages of high current density and high electron emission efficiency. The authors present the emission from a new Al/sub 0.3/Ga/sub 0.7/As-GaAs PDB emitter. A PDB structure consists of a sequence of n/sup +/-i-p/sup +/(delta-doped)-i-n/sup +/ layers. The p/sup +/ delta-doped sheet is fully depleted giving rise to a triangular barrier. A positive bias applied to the surface forward biases the n/sup +/-i-p/sup +/ injecting junction and reverse biases the p/sup +/-i-n/sup +/ accelerating junction so that electrons in the n/sup +/ region are injected across the barrier into a high field region and accelerated toward the surface. Electrons with kinetic energy larger than the surface work function are then emitted. For an efficient PDB emitter, the transit distance (the total thickness of the accelerating region and the top contact layer) should be small and the accelerating voltage (the voltage drop across the accelerating region) should be large. The breakdown of the accelerating junction sets an upper limit to the field applied to the accelerating region. One way to increase the accelerating voltage and hence the electron kinetic energy, without sacrificing the small transit distance, is using materials with a higher breakdown field.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122417346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307415
J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter
A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<>
{"title":"Robust, wide range hydrogen sensor","authors":"J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter","doi":"10.1109/IEDM.1992.307415","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307415","url":null,"abstract":"A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124417834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307450
M. Mohri, H. Kakinuma, T. Tsuruoka
Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<>
{"title":"Fabrication of TFTs using plasma CVD poly-Si at very low temperature","authors":"M. Mohri, H. Kakinuma, T. Tsuruoka","doi":"10.1109/IEDM.1992.307450","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307450","url":null,"abstract":"Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124564791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307411
C. Nguyen, Roger T. IAowe
The implementation of very high Q microelectromechanical filters, constructed of spring-coupled or parallel resonators, requires strict control over the quality factor of the constituent resonators. This report details electrostatic feedback techniques which allow precise control of the quality factor of a micromechanical resonator device, independent of the ambient operating pressure of the micromechanical system. Theoretical formulas governing Q-control are derived and experimentally verified.<>
{"title":"Quality factor control for micromechanical resonators","authors":"C. Nguyen, Roger T. IAowe","doi":"10.1109/IEDM.1992.307411","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307411","url":null,"abstract":"The implementation of very high Q microelectromechanical filters, constructed of spring-coupled or parallel resonators, requires strict control over the quality factor of the constituent resonators. This report details electrostatic feedback techniques which allow precise control of the quality factor of a micromechanical resonator device, independent of the ambient operating pressure of the micromechanical system. Theoretical formulas governing Q-control are derived and experimentally verified.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128940948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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