首页 > 最新文献

Journal of Materials Science: Materials in Electronics最新文献

英文 中文
Cu–ZnO-Ag nanocrystalline thin films with improved nonlinear optical parameters and magnetic properties for optoelectronics and spintronic applications 具有改进的非线性光学参数和磁性能的Cu-ZnO-Ag纳米晶薄膜在光电子学和自旋电子学中的应用
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19 DOI: 10.1007/s10854-026-16587-4
Z. R. Khan, Mansour Mohamed, Abdullah S. Alshammari, M. Bouzidi, Mohd. Shkir

The current work investigated the third-order nonlinear optical parameters and magnetic properties of Cu–ZnO-Ag nanostructured films with variation of Cu doping level grown by spin coater. All the films revealed a more abundant hexagonal wurtzite structure of ZnO with a preferred growth along the (002) plane, as can be seen from X-ray diffractograms. Low-intensity and broad diffraction peak along the (002) plane suggests that the films are composed of few nanometer grains. Raman spectra confirmed a pure ZnO film growth as it showed characteristic vibration modes at 500 and 1050 cm−1. The film co-doped with 1.0 wt.% (Cu, Ag) exhibits higher transmittance than other compositions, whereas the bandgap of the films reduced as the Cu doping level in the ZnO system increased. The room-temperature emission spectra of the samples depicted characteristic UV along with visible light emission. In addition, all compositions of the films exhibited a nonlinear optical nature that is influenced by the Cu doping variation. The Z-scan investigation illustrates that the samples showed remarkable improvement in the third-order nonlinear optical parameters after (Cu, Ag) co-doping in the ZnO system. On the other hand, significant improvement in ferromagnetism was observed from 10.0 emu/cc to 36 emu/cc as the Cu doping concentrations increased. The above-mentioned investigation confirmed that the Cu–ZnO-Ag alloys nanostructured thin films could be potential candidates for optoelectronics and spintronic applications.

本文研究了Cu - zno - ag纳米结构薄膜的三阶非线性光学参数和磁性能随Cu掺杂水平的变化。从x射线衍射图可以看出,所有薄膜中ZnO的六方纤锌矿结构更丰富,且沿(002)平面优先生长。沿(002)平面的低强度和宽衍射峰表明薄膜由少量纳米颗粒组成。拉曼光谱在500和1050 cm−1处显示出特征振动模式,证实了ZnO薄膜的纯生长。共掺杂1.0 wt.% (Cu, Ag)的薄膜透光率高于其他组分,而薄膜的带隙随着ZnO体系中Cu掺杂水平的增加而减小。样品的室温发射光谱描述了特征紫外和可见光发射。此外,薄膜的所有组成都表现出受Cu掺杂变化影响的非线性光学性质。z扫描结果表明,在ZnO体系中共掺杂(Cu, Ag)后,样品的三阶非线性光学参数得到了显著改善。另一方面,随着Cu掺杂浓度的增加,材料的铁磁性从10.0 emu/cc显著提高到36 emu/cc。上述研究证实了Cu-ZnO-Ag合金纳米薄膜在光电子学和自旋电子学领域具有潜在的应用前景。
{"title":"Cu–ZnO-Ag nanocrystalline thin films with improved nonlinear optical parameters and magnetic properties for optoelectronics and spintronic applications","authors":"Z. R. Khan,&nbsp;Mansour Mohamed,&nbsp;Abdullah S. Alshammari,&nbsp;M. Bouzidi,&nbsp;Mohd. Shkir","doi":"10.1007/s10854-026-16587-4","DOIUrl":"10.1007/s10854-026-16587-4","url":null,"abstract":"<div><p>The current work investigated the third-order nonlinear optical parameters and magnetic properties of Cu–ZnO-Ag nanostructured films with variation of Cu doping level grown by spin coater. All the films revealed a more abundant hexagonal wurtzite structure of ZnO with a preferred growth along the (002) plane, as can be seen from X-ray diffractograms. Low-intensity and broad diffraction peak along the (002) plane suggests that the films are composed of few nanometer grains. Raman spectra confirmed a pure ZnO film growth as it showed characteristic vibration modes at 500 and 1050 cm<sup>−1</sup>. The film co-doped with 1.0 wt.% (Cu, Ag) exhibits higher transmittance than other compositions, whereas the bandgap of the films reduced as the Cu doping level in the ZnO system increased. The room-temperature emission spectra of the samples depicted characteristic UV along with visible light emission. In addition, all compositions of the films exhibited a nonlinear optical nature that is influenced by the Cu doping variation. The Z-scan investigation illustrates that the samples showed remarkable improvement in the third-order nonlinear optical parameters after (Cu, Ag) co-doping in the ZnO system. On the other hand, significant improvement in ferromagnetism was observed from 10.0 emu/cc to 36 emu/cc as the Cu doping concentrations increased. The above-mentioned investigation confirmed that the Cu–ZnO-Ag alloys nanostructured thin films could be potential candidates for optoelectronics and spintronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and theoretical investigation on N-(Naphthalen-5-yl)-N-phenyl benzamide organic single crystal toward its NLO applications N-(萘-5-基)-N-苯基苯酰胺有机单晶在NLO应用中的实验与理论研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19 DOI: 10.1007/s10854-025-16547-4
Raveendiran Chinnaraj, Prabukanthan Peethambaram, Vetrivelan Vaithiyanathan, Ragavendran Venkatesan, Tarun Yadav

Nonlinear optical heterocyclic—organic single crystals of N-(Naphthalen-5-yl)-N-Phenyl benzamide (NNNPB) was synthesized using N-phenylnaphthalen-1-amine and benzoyl chloride. Single crystals of NNNPB resolved by X-ray diffraction technique and crystal reveal monoclinic arrangement among space group P21/n. The parameters of lattice of NNNPB molecule and unit cell proportions were a = 9.9798(11) Å, b = 13.2737(13) Å, c = 13.0321(13) Å & Volume = 1725.7(3) Å3. The experimental as well as theoretical FT-IR & Raman spectral data verified the NNNPB molecules significant stretching vibration of the amide carbonyl (–C = O) function group. 1H & 13C NMR spectral investigation was utilized to forecast the existence of proton and carbon in NNNPB compound. TGA and DTA study verified the various phases of the formed crystals degradation and revealed that it is thermally stable up to 150 °C. Quantum chemical calculations were carried out through density functional theory. The topological surface analysis of NNNPB were analysed through ELF and LOL. The virtual second-harmonic generation efficiencies deliberated by Kurtz- Perry powder manner along with are found to be 3.45 period better against potassium dihydrogen phosphate. The UV–vis spectral analysis confirmed the electronic excitations of NNNPB, showing high transparency in the deep ultraviolet region below 230 nm and above 320 nm. This optical behavior indicates its potential application in advanced laser systems. The calculated static first-order hyperpolarizability (β0 = 1.41 × 102 a.u.) and second-order hyperpolarizability (γo = 4.14 × 104 a.u.) reveal a strong nonlinear optical (NLO) response. Furthermore, at dynamic frequencies, the hyperpolarizability value increases to 8.73 × 104 a.u., demonstrating enhanced NLO performance. These results suggest that NNNPB is a promising candidate for optical technologies, particularly for improving second-harmonic generation and dc-Kerr effects.

以N-苯萘-1-胺和苯甲酰氯为原料合成了N-(萘-5-基)-N-苯基苯甲酰胺(NNNPB)非线性光学杂环有机单晶。通过x射线衍射技术对NNNPB单晶进行了解析,发现晶体在P21/n空间群中呈单斜排列。NNNPB分子的晶格参数为a = 9.9798(11) Å, b = 13.2737(13) Å, c = 13.0321(13) Å,体积= 1725.7(3)Å3。实验和理论FT-IR拉曼光谱数据验证了NNNPB分子中酰胺羰基(-C = O)官能团的显著拉伸振动。利用1H &; 13C NMR谱研究预测了NNNPB化合物中质子和碳的存在。TGA和DTA研究证实了形成的晶体在不同阶段的降解,并表明它在150°C以下是热稳定的。量子化学计算是通过密度泛函理论进行的。通过ELF和LOL分析了NNNPB的拓扑表面分析。采用Kurtz- Perry粉末方式对磷酸二氢钾的虚次谐波产生效率提高了3.45倍。紫外-可见光谱分析证实了NNNPB的电子激发,在230 nm以下和320 nm以上的深紫外区显示出较高的透明度。这种光学特性表明了它在先进激光系统中的潜在应用。计算得到的静态一阶超极化率(β0 = 1.41 × 102 a.u)和二阶超极化率(γo = 4.14 × 104 a.u)显示出强烈的非线性光学响应。此外,在动态频率下,超极化率值增加到8.73 × 104 a.u,表明NLO性能得到增强。这些结果表明,NNNPB是光学技术中很有前途的候选者,特别是在改善二次谐波产生和dc-Kerr效应方面。
{"title":"Experimental and theoretical investigation on N-(Naphthalen-5-yl)-N-phenyl benzamide organic single crystal toward its NLO applications","authors":"Raveendiran Chinnaraj,&nbsp;Prabukanthan Peethambaram,&nbsp;Vetrivelan Vaithiyanathan,&nbsp;Ragavendran Venkatesan,&nbsp;Tarun Yadav","doi":"10.1007/s10854-025-16547-4","DOIUrl":"10.1007/s10854-025-16547-4","url":null,"abstract":"<div><p>Nonlinear optical heterocyclic—organic single crystals of N-(Naphthalen-5-yl)-N-Phenyl benzamide (NNNPB) was synthesized using N-phenylnaphthalen-1-amine and benzoyl chloride. Single crystals of NNNPB resolved by X-ray diffraction technique and crystal reveal monoclinic arrangement among space group P21/n. The parameters of lattice of NNNPB molecule and unit cell proportions were a = 9.9798(11) Å, b = 13.2737(13) Å, c = 13.0321(13) Å &amp; Volume = 1725.7(3) Å<sup>3</sup>. The experimental as well as theoretical FT-IR &amp; Raman spectral data verified the NNNPB molecules significant stretching vibration of the amide carbonyl (–C = O) function group. <sup>1</sup>H &amp; <sup>13</sup>C NMR spectral investigation was utilized to forecast the existence of proton and carbon in NNNPB compound. TGA and DTA study verified the various phases of the formed crystals degradation and revealed that it is thermally stable up to 150 °C. Quantum chemical calculations were carried out through density functional theory. The topological surface analysis of NNNPB were analysed through ELF and LOL. The virtual second-harmonic generation efficiencies deliberated by Kurtz- Perry powder manner along with are found to be 3.45 period better against potassium dihydrogen phosphate. The UV–vis spectral analysis confirmed the electronic excitations of NNNPB, showing high transparency in the deep ultraviolet region below 230 nm and above 320 nm. This optical behavior indicates its potential application in advanced laser systems. The calculated static first-order hyperpolarizability (<i>β</i><sub><i>0</i></sub> = 1.41 × 10<sup>2</sup> a.u.) and second-order hyperpolarizability (<i>γ</i><sub><i>o</i></sub> = 4.14 × 10<sup>4</sup> a.u.) reveal a strong nonlinear optical (NLO) response. Furthermore, at dynamic frequencies, the hyperpolarizability value increases to 8.73 × 10<sup>4</sup> a.u., demonstrating enhanced NLO performance. These results suggest that NNNPB is a promising candidate for optical technologies, particularly for improving second-harmonic generation and dc-Kerr effects.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of indium on the microstructural evolution, lattice characteristics, thermal stability and mechanical performance in Sn-3.0Ag-0.5Cu solder alloys 铟对Sn-3.0Ag-0.5Cu钎料合金组织演变、晶格特征、热稳定性和力学性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19 DOI: 10.1007/s10854-026-16641-1
N. S. Mohamad Zaimi, M. A. A. Mohd Salleh, Mohd Sharizal Abdul Aziz, N. I. Muhammad Nadzri, M. Zan Hazizi, K. Kamonsuangkasem, W. Tanthanuch, S. Tancharakorn, N. Mothong, C. Y. Khor

The present work investigates the effect of indium (In) additions at 5 wt.% and 15 wt.% in Sn-3.0Ag-0.5Cu (SAC305) lead-free solder alloys. In has recently gained attention for its ability to lower-melting points. However, the effects of In additions on temperature-dependent phase transformations and lattice characteristics in SAC305 remain insufficiently understood. In this study, in-situ synchrotron XRD was used to characterize the temperature dependence of the lattice parameters of the β-Sn and γ-InSn₄ phases. Adding 5 wt.% and 15 wt.% In triggers significant microstructural changes. While the base SAC305 solder is mainly composed of β-Sn and eutectic Ag₃Sn and Cu₆Sn₅ phases, the 5 wt.% In addition notably promotes the emergence of a new Ag₉In₄ phase. The γ-InSn₄ phase dominates the microstructure, with β-Sn gradually disappearing and being replaced by γ-InSn₄ throughout the solder matrix for 15 wt.% In. Advanced in-situ XRD analysis shows that adding 5 wt.% In increases the β-Sn lattice parameters, as the larger In atoms dissolve substitutionally on Sn sites and thereby expand the lattice. Thermal analysis shows that In reduces both the liquidus temperature and undercooling of SAC305–xIn alloys, with the largest reduction observed for SAC305–15In. Mechanically, the addition of 5 wt.% In results in an ~ 50% increase in tensile strength, whereas a higher In content of 15 wt.% causes a substantial decrease in elongation, indicating a loss of ductility at excessive In levels. These findings emphasize the critical balance of In content required to optimise the performance of SAC305-based solder alloys.

本文研究了在Sn-3.0Ag-0.5Cu (SAC305)无铅钎料合金中添加5 wt.%和15 wt.%铟对钎料性能的影响。最近,铟因其降低熔点的能力而受到关注。然而,在SAC305中添加In对温度相关相变和晶格特性的影响仍然没有得到充分的了解。在本研究中,采用原位同步加速器XRD表征了β-Sn和γ-InSn₄相晶格参数的温度依赖性。添加5 wt.%和15 wt.%的In会引起显著的微观结构变化。虽然基础SAC305焊料主要由β-Sn和共晶Ag₃Sn和Cu₆Sn₅相组成,但5wt .%的添加显著促进了新的Ag₉In₄相的出现。γ-InSn₄相占主导地位,在15wt .% In的钎料基体中,β-Sn逐渐消失,并被γ-InSn₄所取代。先进的原位XRD分析表明,添加5 wt.%的In增加了β-Sn晶格参数,因为较大的In原子取代溶解在Sn位点上,从而扩大了晶格。热分析表明,In降低了SAC305-xIn合金的液相温度和过冷度,其中SAC305-15In降低幅度最大。机械上,添加5wt .%的In可使拉伸强度增加50%,而添加15wt .%的In则会导致伸长率大幅下降,这表明过多的In含量会导致延展性丧失。这些发现强调了优化sac305基钎料合金性能所需的In含量的关键平衡。
{"title":"The effects of indium on the microstructural evolution, lattice characteristics, thermal stability and mechanical performance in Sn-3.0Ag-0.5Cu solder alloys","authors":"N. S. Mohamad Zaimi,&nbsp;M. A. A. Mohd Salleh,&nbsp;Mohd Sharizal Abdul Aziz,&nbsp;N. I. Muhammad Nadzri,&nbsp;M. Zan Hazizi,&nbsp;K. Kamonsuangkasem,&nbsp;W. Tanthanuch,&nbsp;S. Tancharakorn,&nbsp;N. Mothong,&nbsp;C. Y. Khor","doi":"10.1007/s10854-026-16641-1","DOIUrl":"10.1007/s10854-026-16641-1","url":null,"abstract":"<div><p>The present work investigates the effect of indium (In) additions at 5 wt.% and 15 wt.% in Sn-3.0Ag-0.5Cu (SAC305) lead-free solder alloys. In has recently gained attention for its ability to lower-melting points. However, the effects of In additions on temperature-dependent phase transformations and lattice characteristics in SAC305 remain insufficiently understood. In this study, in-situ synchrotron XRD was used to characterize the temperature dependence of the lattice parameters of the β-Sn and γ-InSn₄ phases. Adding 5 wt.% and 15 wt.% In triggers significant microstructural changes. While the base SAC305 solder is mainly composed of β-Sn and eutectic Ag₃Sn and Cu₆Sn₅ phases, the 5 wt.% In addition notably promotes the emergence of a new Ag₉In₄ phase. The γ-InSn₄ phase dominates the microstructure, with β-Sn gradually disappearing and being replaced by γ-InSn₄ throughout the solder matrix for 15 wt.% In. Advanced in-situ XRD analysis shows that adding 5 wt.% In increases the β-Sn lattice parameters, as the larger In atoms dissolve substitutionally on Sn sites and thereby expand the lattice. Thermal analysis shows that In reduces both the liquidus temperature and undercooling of SAC305–xIn alloys, with the largest reduction observed for SAC305–15In. Mechanically, the addition of 5 wt.% In results in an ~ 50% increase in tensile strength, whereas a higher In content of 15 wt.% causes a substantial decrease in elongation, indicating a loss of ductility at excessive In levels. These findings emphasize the critical balance of In content required to optimise the performance of SAC305-based solder alloys.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-026-16641-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146027046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and comprehensive characterization of neodymium-doped indium zinc oxide thin films via RF-DC magnetron co-sputtering for enhanced transparent conductive applications RF-DC磁控共溅射法合成掺钕铟氧化锌薄膜并对其进行综合表征
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19 DOI: 10.1007/s10854-026-16593-6
Mohsin Khan, Saira Riaz, Shahzad Naseem

Neodymium (Nd)-doped indium zinc oxide (IZO) thin films were grown by RF-DC magnetron co-sputtering to study the enhancement of structural, optical, and electrical properties, in addition to simple linear doping behavior. The research shows a non-monotonic multi-stage doping mechanism that is controlled by competing physical processes. X-ray diffraction results revealed that the crystallite and grain sizes increased with the power of Nd up to 30 W, with maximum sizes of 37.87 and 41.67 nm, respectively, and then decreased at 40 W, suggesting substitutional saturation. A similar behavior is observed for the lattice parameters, which increase to 9.16 Å at 30 W and then decrease to 9.07 Å at 40 W. The optical transparency improves of IZO from 88% in the undoped film to 92% at 20 W; however, further increases in dopant power reduce the transparency to 75% at 30 W, followed by a partial increased to 85% at 40 W. The optical bandgap decreases from 3.58 eV (undoped) to 3.40 eV at 30 W, then increases again to reach 3.53 eV at 40 W, owing to the Burstein-Moss effect. Electrically, the carrier concentration continued to increase with Nd doping, and the mobility was maximum at 30 W (85.63 cm2/Vs), with a decrease at higher power because of increased ionized impurity and grain-boundary scattering. The minimum resistivity (2.64 × 10−4 Ω·cm) was observed at 30 W, as compared to the maximum doping. The photoluminescence intensity increased continuously up to 40 W, suggesting a divergence between optical emission and transport optimization. Overall, 30 W Nd doping is the critical point of balance, where the structural quality, carrier mobility, and conductivity are maximized simultaneously. This work highlights the importance of considering competing mechanisms and solubility limitations when optimizing transparent conducting oxides for optoelectronic applications.

采用RF-DC磁控共溅射法制备了掺钕锌氧化铟(IZO)薄膜,研究了除了简单的线性掺杂行为外,其结构、光学和电学性能的增强。研究显示了一种由相互竞争的物理过程控制的非单调多阶段掺杂机制。x射线衍射结果表明,当Nd功率达到30 W时,晶体尺寸和晶粒尺寸逐渐增大,最大尺寸分别为37.87 nm和41.67 nm;当Nd功率达到40 W时,晶粒尺寸逐渐减小,显示出取代饱和现象。晶格参数在30 W时增加到9.16 Å,在40 W时下降到9.07 Å。在20 W时,IZO的光学透明度由未掺杂时的88%提高到92%;然而,当掺杂功率进一步增加时,透明度在30w时降低到75%,在40w时则部分增加到85%。在30 W时,由于Burstein-Moss效应,光带隙从3.58 eV(未掺杂)减小到3.40 eV,然后在40 W时再次增大到3.53 eV。随着Nd的掺杂,载流子浓度持续增加,在30 W (85.63 cm2/Vs)时迁移率最大,随着功率的增加,由于电离杂质和晶界散射的增加,迁移率降低。与最大掺杂相比,在30w时观察到最小电阻率(2.64 × 10−4 Ω·cm)。光致发光强度持续增加至40 W,表明光发射和输运优化之间存在分歧。总的来说,30wnd掺杂是平衡的临界点,在这里结构质量、载流子迁移率和电导率同时达到最大。这项工作强调了在优化光电应用的透明导电氧化物时考虑竞争机制和溶解度限制的重要性。
{"title":"Synthesis and comprehensive characterization of neodymium-doped indium zinc oxide thin films via RF-DC magnetron co-sputtering for enhanced transparent conductive applications","authors":"Mohsin Khan,&nbsp;Saira Riaz,&nbsp;Shahzad Naseem","doi":"10.1007/s10854-026-16593-6","DOIUrl":"10.1007/s10854-026-16593-6","url":null,"abstract":"<div><p>Neodymium (Nd)-doped indium zinc oxide (IZO) thin films were grown by RF-DC magnetron co-sputtering to study the enhancement of structural, optical, and electrical properties, in addition to simple linear doping behavior. The research shows a non-monotonic multi-stage doping mechanism that is controlled by competing physical processes. X-ray diffraction results revealed that the crystallite and grain sizes increased with the power of Nd up to 30 W, with maximum sizes of 37.87 and 41.67 nm, respectively, and then decreased at 40 W, suggesting substitutional saturation. A similar behavior is observed for the lattice parameters, which increase to 9.16 Å at 30 W and then decrease to 9.07 Å at 40 W. The optical transparency improves of IZO from 88% in the undoped film to 92% at 20 W; however, further increases in dopant power reduce the transparency to 75% at 30 W, followed by a partial increased to 85% at 40 W. The optical bandgap decreases from 3.58 eV (undoped) to 3.40 eV at 30 W, then increases again to reach 3.53 eV at 40 W, owing to the Burstein-Moss effect. Electrically, the carrier concentration continued to increase with Nd doping, and the mobility was maximum at 30 W (85.63 cm<sup>2</sup>/Vs), with a decrease at higher power because of increased ionized impurity and grain-boundary scattering. The minimum resistivity (2.64 × 10<sup>−4</sup> Ω·cm) was observed at 30 W, as compared to the maximum doping. The photoluminescence intensity increased continuously up to 40 W, suggesting a divergence between optical emission and transport optimization. Overall, 30 W Nd doping is the critical point of balance, where the structural quality, carrier mobility, and conductivity are maximized simultaneously. This work highlights the importance of considering competing mechanisms and solubility limitations when optimizing transparent conducting oxides for optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146027047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ growth of CoMoO₄@NiO heterojunction on nickel foam with 3D flower-like architecture for high-performance asymmetric supercapacitors 在泡沫镍上原位生长具有三维花朵结构的CoMoO₄@NiO异质结用于高性能非对称超级电容器
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-18 DOI: 10.1007/s10854-026-16588-3
Xiongzhi Li, Ya Qi Wang, Xiao Qian Wang, Kejia Shi, Chao Yu, Fan Bin Meng, Yujie Zhang

This study employed a stepwise hydrothermal-calcination strategy to in situ construct a three-dimensional nanosheet-like CoMoO@NiO heterojunction on foam nickel, serving as a high-performance pseudocapacitive electrode. This unique hierarchical structure provides abundant active sites and excellent ion transport pathways. The prepared electrode exhibits a high specific capacitance of 1796.8 F g⁻1 (at 1 A g⁻1) and outstanding cycling stability (95.7% capacity retention after 5000 cycles). Based on this, the assembled CoMoO@NiO//AC asymmetric supercapacitor device exhibits a wide voltage window of 1.7 V, achieving an energy density of 62.39 Wh kg⁻1 and a corresponding power density of 6250 W kg⁻1. It maintains 82.3% of its initial capacity after extended cycling. The significant performance enhancement stems from the synergistic effects between CoMoO and NiO. This composite structure effectively modulates the interfacial electronic structure, optimizes charge transfer dynamics, and promotes ion diffusion. It provides a modification strategy for next-generation cathode materials.

本研究采用逐步水热煅烧策略在泡沫镍上原位构建三维纳米片状CoMoO₄@NiO异质结,作为高性能假电容电极。这种独特的层次结构提供了丰富的活性位点和优良的离子传输途径。所制备的电极具有1796.8 F g⁻1(在1 a g⁻1时)的高比电容和出色的循环稳定性(5000次循环后容量保持95.7%)。在此基础上,组装的CoMoO₄@NiO//AC不对称超级电容器器件具有1.7 V的宽电压窗,能量密度为62.39 Wh kg⁻1,相应的功率密度为6250 W kg⁻1。经过长时间循环后,其容量仍保持在初始容量的82.3%。comoo_4和NiO之间的协同作用是性能显著增强的原因。这种复合结构有效地调节了界面电子结构,优化了电荷传递动力学,促进了离子扩散。为下一代正极材料提供了一种改性策略。
{"title":"In situ growth of CoMoO₄@NiO heterojunction on nickel foam with 3D flower-like architecture for high-performance asymmetric supercapacitors","authors":"Xiongzhi Li,&nbsp;Ya Qi Wang,&nbsp;Xiao Qian Wang,&nbsp;Kejia Shi,&nbsp;Chao Yu,&nbsp;Fan Bin Meng,&nbsp;Yujie Zhang","doi":"10.1007/s10854-026-16588-3","DOIUrl":"10.1007/s10854-026-16588-3","url":null,"abstract":"<div><p>This study employed a stepwise hydrothermal-calcination strategy to in situ construct a three-dimensional nanosheet-like CoMoO<sub>₄</sub>@NiO heterojunction on foam nickel, serving as a high-performance pseudocapacitive electrode. This unique hierarchical structure provides abundant active sites and excellent ion transport pathways. The prepared electrode exhibits a high specific capacitance of 1796.8 F g⁻<sup>1</sup> (at 1 A g⁻<sup>1</sup>) and outstanding cycling stability (95.7% capacity retention after 5000 cycles). Based on this, the assembled CoMoO<sub>₄</sub>@NiO//AC asymmetric supercapacitor device exhibits a wide voltage window of 1.7 V, achieving an energy density of 62.39 Wh kg⁻<sup>1</sup> and a corresponding power density of 6250 W kg⁻<sup>1</sup>. It maintains 82.3% of its initial capacity after extended cycling. The significant performance enhancement stems from the synergistic effects between CoMoO<sub>₄</sub> and NiO. This composite structure effectively modulates the interfacial electronic structure, optimizes charge transfer dynamics, and promotes ion diffusion. It provides a modification strategy for next-generation cathode materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146027151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection of NO, NO2, H2S, and SO2 by SnSe2 gas sensor at room temperature: DFT simulation and experimental validation 室温下SnSe2气体传感器对NO、NO2、H2S和SO2的检测:DFT模拟与实验验证
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-17 DOI: 10.1007/s10854-025-16560-7
Yingyu Jin, Mathankumar Manoharan, Pinghua Li, Xuye Zhuang

To investigate the room-temperature gas sensing performance of two-dimensional SnSe2 toward various toxic and hazardous gases, the adsorption energies and electronic density of states (DOS) of SnSe2 upon interaction with four typical gases (NO, NO2, H2S, and SO2) were calculated based on density functional theory (DFT). SnSe2 gas sensors were fabricated via mechanical exfoliation and an all-dry transfer process, and their sensing properties were experimentally validated at room temperature. The results indicate that for the oxidizing gases NO and NO2, the adsorption energies on SnSe2 were -4.22 eV and -1.01 eV, respectively, corresponding to sensor responses of 5.1% and 7.5%, with response times of 678 s and 375 s. For the reducing gases H2S and SO2, the adsorption energies were -0.31 eV and -0.27 eV, respectively, yielding responses of 15% and 6% with response times of 367 s and 549 s. Notably, the sensor demonstrated satisfactory repeatability and 30-day stability for H2S detection, exhibiting a 1% response to 1 ppm H2S at 25 °C and 50% relative humidity (RH), along with an excellent linearity (R2 = 0.97) within the concentration range of 1 to 12.5 ppm. The experimental and theoretical results collectively validate the great potential of SnSe2 for gas sensing and highlight its unique room-temperature response behaviors to various gases.

为了研究二维SnSe2对各种有毒有害气体的室温气敏性能,基于密度泛函理论(DFT)计算了SnSe2与4种典型气体(NO、NO2、H2S和SO2)相互作用时的吸附能和电子态密度(DOS)。采用机械剥离和全干转移工艺制备了SnSe2气体传感器,并在室温下对其传感性能进行了实验验证。结果表明,对于氧化性气体NO和NO2, SnSe2在SnSe2上的吸附能分别为-4.22 eV和-1.01 eV,对应的传感器响应分别为5.1%和7.5%,响应时间分别为678 s和375 s。对于还原性气体H2S和SO2,吸附能分别为-0.31 eV和-0.27 eV,响应率分别为15%和6%,响应时间分别为367 s和549 s。值得注意的是,该传感器在H2S检测中表现出令人满意的重复性和30天的稳定性,在25°C和50%相对湿度(RH)下,对1 ppm H2S的响应为1%,在1至12.5 ppm的浓度范围内具有良好的线性(R2 = 0.97)。实验和理论结果共同验证了SnSe2在气体传感方面的巨大潜力,并突出了其对各种气体的独特室温响应行为。
{"title":"Detection of NO, NO2, H2S, and SO2 by SnSe2 gas sensor at room temperature: DFT simulation and experimental validation","authors":"Yingyu Jin,&nbsp;Mathankumar Manoharan,&nbsp;Pinghua Li,&nbsp;Xuye Zhuang","doi":"10.1007/s10854-025-16560-7","DOIUrl":"10.1007/s10854-025-16560-7","url":null,"abstract":"<div><p>To investigate the room-temperature gas sensing performance of two-dimensional SnSe<sub>2</sub> toward various toxic and hazardous gases, the adsorption energies and electronic density of states (DOS) of SnSe<sub>2</sub> upon interaction with four typical gases (NO, NO<sub>2</sub>, H<sub>2</sub>S, and SO<sub>2</sub>) were calculated based on density functional theory (DFT). SnSe<sub>2</sub> gas sensors were fabricated via mechanical exfoliation and an all-dry transfer process, and their sensing properties were experimentally validated at room temperature. The results indicate that for the oxidizing gases NO and NO<sub>2</sub>, the adsorption energies on SnSe<sub>2</sub> were -4.22 eV and -1.01 eV, respectively, corresponding to sensor responses of 5.1% and 7.5%, with response times of 678 s and 375 s. For the reducing gases H<sub>2</sub>S and SO<sub>2</sub>, the adsorption energies were -0.31 eV and -0.27 eV, respectively, yielding responses of 15% and 6% with response times of 367 s and 549 s. Notably, the sensor demonstrated satisfactory repeatability and 30-day stability for H<sub>2</sub>S detection, exhibiting a 1% response to 1 ppm H<sub>2</sub>S at 25 °C and 50% relative humidity (RH), along with an excellent linearity (R<sup>2</sup> = 0.97) within the concentration range of 1 to 12.5 ppm. The experimental and theoretical results collectively validate the great potential of SnSe<sub>2</sub> for gas sensing and highlight its unique room-temperature response behaviors to various gases.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Disposable and sensitive nanostructured nickel oxide modified electrode sensor for point-of-care detection of acetaminophen 一次性、灵敏的纳米结构氧化镍修饰电极传感器用于对乙酰氨基酚的即时检测
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-17 DOI: 10.1007/s10854-026-16601-9
Mingfang Zhan, Jiayan Li, Mohammad Jahidul Alam, Sima Akter, Hong Wan, Sakil Mahmud

Acetaminophen (paracetamol, PA) is among the most widely used analgesic and antipyretic drugs, necessitating sensitive and reliable monitoring in pharmaceutical and clinical matrices. Although numerous PA sensors have been reported, many rely on complex nanocomposites or multistep fabrication, limiting reproducibility and scalability. Here, a minimalist yet highly efficient sensing strategy is demonstrated by electrodepositing a uniformly nanostructured nickel oxide (NiO) film directly onto a disposable screen-printed carbon electrode (SPCE). This rational single-step deposition yields a catalytically active surface with markedly enhanced electron-transfer characteristics. The resulting NiO/SPCE exhibits a linear response from 1.0 to 9.17 μM and a detection limit of 0.11 μM, outperforming many previously reported metal-oxide-based PA sensors. Morphological characterization confirms the formation of a smooth, compact, and homogeneously distributed NiO layer, while differential pulse voltammetry highlights excellent selectivity, minimal interference from common ions and metabolites, and strong operational stability. Together, these features establish the NiO/SPCE as a reproducible, low-cost, and high-performance platform for the precise determination of PA in pharmaceutical formulations and human fluids, with clear potential for integration into portable point-of-care systems.

对乙酰氨基酚(paracetamol, PA)是最广泛使用的镇痛和解热药物之一,需要在制药和临床矩阵中进行敏感和可靠的监测。虽然已经报道了许多PA传感器,但许多传感器依赖于复杂的纳米复合材料或多步骤制造,限制了可重复性和可扩展性。在这里,通过将均匀纳米结构的氧化镍(NiO)薄膜直接电沉积到一次性丝网印刷碳电极(SPCE)上,展示了一种极简而高效的传感策略。这种合理的单步沉积产生了具有显著增强的电子转移特性的催化活性表面。NiO/SPCE的线性响应范围为1.0 ~ 9.17 μM,检测限为0.11 μM,优于许多先前报道的基于金属氧化物的PA传感器。形态学表征证实形成了光滑、致密、均匀分布的NiO层,而差分脉冲伏安法则突出了优异的选择性,最小的普通离子和代谢物干扰,以及很强的操作稳定性。总之,这些特点使NiO/SPCE成为一种可重复、低成本和高性能的平台,用于精确测定药物配方和人体液体中的PA,具有整合到便携式护理点系统的明显潜力。
{"title":"Disposable and sensitive nanostructured nickel oxide modified electrode sensor for point-of-care detection of acetaminophen","authors":"Mingfang Zhan,&nbsp;Jiayan Li,&nbsp;Mohammad Jahidul Alam,&nbsp;Sima Akter,&nbsp;Hong Wan,&nbsp;Sakil Mahmud","doi":"10.1007/s10854-026-16601-9","DOIUrl":"10.1007/s10854-026-16601-9","url":null,"abstract":"<div><p>Acetaminophen (paracetamol, PA) is among the most widely used analgesic and antipyretic drugs, necessitating sensitive and reliable monitoring in pharmaceutical and clinical matrices. Although numerous PA sensors have been reported, many rely on complex nanocomposites or multistep fabrication, limiting reproducibility and scalability. Here, a minimalist yet highly efficient sensing strategy is demonstrated by electrodepositing a uniformly nanostructured nickel oxide (NiO) film directly onto a disposable screen-printed carbon electrode (SPCE). This rational single-step deposition yields a catalytically active surface with markedly enhanced electron-transfer characteristics. The resulting NiO/SPCE exhibits a linear response from 1.0 to 9.17 μM and a detection limit of 0.11 μM, outperforming many previously reported metal-oxide-based PA sensors. Morphological characterization confirms the formation of a smooth, compact, and homogeneously distributed NiO layer, while differential pulse voltammetry highlights excellent selectivity, minimal interference from common ions and metabolites, and strong operational stability. Together, these features establish the NiO/SPCE as a reproducible, low-cost, and high-performance platform for the precise determination of PA in pharmaceutical formulations and human fluids, with clear potential for integration into portable point-of-care systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistivity enhancement in c-axis-grown nanograin Mn–Zn ferrite thin films generated through radio frequency sputtering technique 射频溅射法制备c轴生长纳米Mn-Zn铁氧体薄膜的电阻率增强研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-17 DOI: 10.1007/s10854-026-16617-1
Jaison Joseph, Rajashri Karmali Mordekar, V. P. Mahadevan Pillai

Ultra-thin ferrite materials synthesis, with physical properties tailored to specific applications is expected to drive innovations in manufacturing techniques and production processes for electronic components and devices. The specific physical properties inherent in ferrite thin films heavily rely on the choice of the target material for film fabrication, selection of fabrication techniques, and the precise deposition parameters employed. Consequently, we resolute to utilize nano-particle ferrite powder as the target in radiofrequency sputtering technique, for producing MnxZn1−xFe2O4 thin films having nanograins and specific grain orientation along c-axis, on a quartz substrate. Remarkably, we observed a substantial increase in resistivity, by a factor of 2 to 3, in thin-film ferrite material compared to the base materials used for its fabrication. This enhanced resistivity is likely an outcome of grain boundary effects that stem from peculiar film growth along c-axis at minimal film thickness, ranging from 590 to 830 Å, wherein the planar transport of charge carriers becomes predominantly prominent.

超薄铁氧体材料的合成,具有适合特定应用的物理特性,有望推动电子元件和设备制造技术和生产工艺的创新。铁氧体薄膜固有的特定物理性能在很大程度上依赖于薄膜制造的目标材料的选择、制造技术的选择以及所采用的精确沉积参数。因此,我们决定利用纳米颗粒铁氧体粉末作为射频溅射技术的目标,在石英衬底上制备具有纳米晶粒和沿c轴特定晶粒取向的MnxZn1−xFe2O4薄膜。值得注意的是,我们观察到薄膜铁氧体材料的电阻率大幅增加,与用于其制造的基材相比,增加了2到3倍。这种增强的电阻率可能是晶界效应的结果,这种晶界效应源于在最小薄膜厚度下沿c轴生长的特殊薄膜,范围从590到830 Å,其中载流子的平面输运变得主要突出。
{"title":"Resistivity enhancement in c-axis-grown nanograin Mn–Zn ferrite thin films generated through radio frequency sputtering technique","authors":"Jaison Joseph,&nbsp;Rajashri Karmali Mordekar,&nbsp;V. P. Mahadevan Pillai","doi":"10.1007/s10854-026-16617-1","DOIUrl":"10.1007/s10854-026-16617-1","url":null,"abstract":"<div><p>Ultra-thin ferrite materials synthesis, with physical properties tailored to specific applications is expected to drive innovations in manufacturing techniques and production processes for electronic components and devices. The specific physical properties inherent in ferrite thin films heavily rely on the choice of the target material for film fabrication, selection of fabrication techniques, and the precise deposition parameters employed. Consequently, we resolute to utilize nano-particle ferrite powder as the target in radiofrequency sputtering technique, for producing Mn<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>Fe<sub>2</sub>O<sub>4</sub> thin films having nanograins and specific grain orientation along <i>c</i>-axis, on a quartz substrate. Remarkably, we observed a substantial increase in resistivity, by a factor of 2 to 3, in thin-film ferrite material compared to the base materials used for its fabrication. This enhanced resistivity is likely an outcome of grain boundary effects that stem from peculiar film growth along <i>c</i>-axis at minimal film thickness, ranging from 590 to 830 Å, wherein the planar transport of charge carriers becomes predominantly prominent.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An improved unified creep‐plasticity constitutive model for viscoplastic solder materials of electronic packaging subjected to high-strain-rate impact loadings 高应变率冲击载荷下电子封装粘塑焊料的改进的统一蠕变塑性本构模型
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-17 DOI: 10.1007/s10854-026-16591-8
Ning An, Bofeng Li, Yuexing Wang, Xiangyu Sun, Xu He

With the increasing demand for reliability in electronic packaging under extreme dynamic loading environments, accurate characterization of solder joint deformation behavior has become critical for optimizing structural design and enhancing product durability. This paper addresses this imperative by focusing on the deformation mechanisms and constitutive modeling challenges of solder joints under high-strain-rate conditions. Traditional metallic material models are unable to adequately capture the complex thermo-mechanical responses of solders, highlighting the need for advanced constitutive frameworks. By integrating split Hopkinson pressure bar (SHPB) experimental data with a unified creep-plasticity theory, an improved constitutive model is developed that incorporates the strengths of the Johnson–Cook formulation while addressing its limitations in temperature-dependent behavior. Experimental validation utilizes Pb37Sn63 solder specimens tested at temperatures of 25°C, 60°C, and 100°C under strain rates up to 5500 s⁻1, enabling quantitative analysis of coupled temperature-strain rate effects on stress–strain behavior. The proposed model demonstrates exceptional accuracy in predicting solder deformation across extreme thermo-mechanical conditions. Following rigorous parameter calibration through SHPB test replication via user-defined material subroutines in finite element simulations, the model exhibits high predictive fidelity. Implementation in package-level structural simulations further reveals critical dynamic mechanical response characteristics under impact loading, confirming its efficacy in enhancing reliability analysis for electronics packaging design.

随着电子封装在极端动态负载环境下对可靠性的要求越来越高,准确表征焊点变形行为对于优化结构设计和提高产品耐用性至关重要。本文通过关注高应变率条件下焊点的变形机制和本构建模挑战来解决这一当务之急。传统的金属材料模型无法充分捕捉焊料的复杂热机械响应,突出了对先进本构框架的需求。通过将分离式霍普金森压力杆(SHPB)实验数据与统一的蠕变塑性理论相结合,开发了一种改进的本构模型,该模型结合了Johnson-Cook公式的优点,同时解决了其在温度依赖行为方面的局限性。实验验证利用Pb37Sn63焊料试样在25°C, 60°C和100°C的温度下进行测试,应变率高达5500 s毒毒学,可以定量分析耦合温度-应变率对应力-应变行为的影响。所提出的模型在预测极端热机械条件下焊料变形方面具有卓越的准确性。在有限元模拟中,通过用户定义的材料子程序通过SHPB测试复制进行严格的参数校准后,该模型显示出很高的预测保真度。在封装级结构仿真中进一步揭示了冲击载荷下的关键动态力学响应特性,证实了该方法在提高电子封装设计可靠性分析方面的有效性。
{"title":"An improved unified creep‐plasticity constitutive model for viscoplastic solder materials of electronic packaging subjected to high-strain-rate impact loadings","authors":"Ning An,&nbsp;Bofeng Li,&nbsp;Yuexing Wang,&nbsp;Xiangyu Sun,&nbsp;Xu He","doi":"10.1007/s10854-026-16591-8","DOIUrl":"10.1007/s10854-026-16591-8","url":null,"abstract":"<div><p>With the increasing demand for reliability in electronic packaging under extreme dynamic loading environments, accurate characterization of solder joint deformation behavior has become critical for optimizing structural design and enhancing product durability. This paper addresses this imperative by focusing on the deformation mechanisms and constitutive modeling challenges of solder joints under high-strain-rate conditions. Traditional metallic material models are unable to adequately capture the complex thermo-mechanical responses of solders, highlighting the need for advanced constitutive frameworks. By integrating split Hopkinson pressure bar (SHPB) experimental data with a unified creep-plasticity theory, an improved constitutive model is developed that incorporates the strengths of the Johnson–Cook formulation while addressing its limitations in temperature-dependent behavior. Experimental validation utilizes Pb37Sn63 solder specimens tested at temperatures of 25°C, 60°C, and 100°C under strain rates up to 5500 s⁻<sup>1</sup>, enabling quantitative analysis of coupled temperature-strain rate effects on stress–strain behavior. The proposed model demonstrates exceptional accuracy in predicting solder deformation across extreme thermo-mechanical conditions. Following rigorous parameter calibration through SHPB test replication via user-defined material subroutines in finite element simulations, the model exhibits high predictive fidelity. Implementation in package-level structural simulations further reveals critical dynamic mechanical response characteristics under impact loading, confirming its efficacy in enhancing reliability analysis for electronics packaging design.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145983194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of TiO2 nanoparticles on mechanical and corrosion properties of Cu/SAC305–xTiO2/Cu solder joints: experiments and theoretical calculations TiO2纳米粒子对Cu/ SAC305-xTiO2 /Cu焊点力学和腐蚀性能的影响:实验和理论计算
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-16 DOI: 10.1007/s10854-026-16586-5
Rugao Huang, Langfeng Zhu, Xiaowu Hu, Jinghui Fan, Zhixiang Wu, Wenjing Chen

In this study, the shear strength and corrosion resistance of Cu/Sn–3.0Ag–0.5Cu–xTiO2/Cu solder joints were systematically investigated to determine the mechanism by which various mass fractions of TiO2 nanoparticle doping affect them. The experiment was designed with four sets of TiO2 doping concentrations (x = 0, 0.3, 0.6, 0.9 wt%). The corrosion and mechanical properties of the soldered joints were characterized at various periods of corrosion. The joints were subjected to immersion corrosion testing in a 3.5 wt% NaCl solution for a maximum of 28 days. The experimental results indicate that the corrosion resistance of the soldered joints firstly increases and then decreases as the TiO2 doping content increases. Under uncorroded conditions, the shear strength shows a monotonically increasing pattern. The shear strength of the solder joints containing 0.9 wt% TiO2 decreased significantly more than that of the other groups after 28 days of corrosion. Based on first-principles calculations, the corrosion resistance of the solder joints can be enhanced by the formation of stable TiO2–Sn interface chemical bonds, which have a binding energy of 2.04 eV, within the Sn matrix through the incorporation of TiO2 nanoparticles. However, the agglomeration effect of TiO2 nanoparticles results in a substantial decrease in the effective bonding area between the Sn substrate and TiO2 nanoparticles when the doping concentration surpasses the critical threshold. Consequently, the corrosion protection performance is substantially diminished.

本研究系统研究了Cu/ Sn-3.0Ag-0.5Cu-xTiO2 /Cu焊点的抗剪强度和耐蚀性,确定了不同质量分数TiO2纳米颗粒掺杂对焊点抗剪强度和耐蚀性的影响机理。实验设计了4组TiO2掺杂浓度(x = 0、0.3、0.6、0.9 wt%)。在不同的腐蚀阶段对焊接接头的腐蚀和力学性能进行了表征。接头在3.5 wt% NaCl溶液中进行浸泡腐蚀测试,时间最长为28天。实验结果表明,随着TiO2掺杂量的增加,焊点的耐蚀性先升高后降低。在未腐蚀条件下,抗剪强度呈单调递增规律。氧化钛含量为0.9 wt%的焊点在腐蚀28天后的抗剪强度下降幅度明显大于其他焊点。根据第一性原理计算,通过在锡基体中加入TiO2纳米粒子,可以在锡基体中形成稳定的TiO2 - Sn界面化学键,其结合能为2.04 eV,从而提高了焊点的耐腐蚀性。然而,TiO2纳米粒子的团聚效应导致当掺杂浓度超过临界阈值时,Sn衬底与TiO2纳米粒子之间的有效结合面积大幅减小。因此,腐蚀防护性能大大降低。
{"title":"Effects of TiO2 nanoparticles on mechanical and corrosion properties of Cu/SAC305–xTiO2/Cu solder joints: experiments and theoretical calculations","authors":"Rugao Huang,&nbsp;Langfeng Zhu,&nbsp;Xiaowu Hu,&nbsp;Jinghui Fan,&nbsp;Zhixiang Wu,&nbsp;Wenjing Chen","doi":"10.1007/s10854-026-16586-5","DOIUrl":"10.1007/s10854-026-16586-5","url":null,"abstract":"<div><p>In this study, the shear strength and corrosion resistance of Cu/Sn–3.0Ag–0.5Cu–<i>x</i>TiO<sub>2</sub>/Cu solder joints were systematically investigated to determine the mechanism by which various mass fractions of TiO<sub>2</sub> nanoparticle doping affect them. The experiment was designed with four sets of TiO<sub>2</sub> doping concentrations (<i>x</i> = 0, 0.3, 0.6, 0.9 wt%). The corrosion and mechanical properties of the soldered joints were characterized at various periods of corrosion. The joints were subjected to immersion corrosion testing in a 3.5 wt% NaCl solution for a maximum of 28 days. The experimental results indicate that the corrosion resistance of the soldered joints firstly increases and then decreases as the TiO<sub>2</sub> doping content increases. Under uncorroded conditions, the shear strength shows a monotonically increasing pattern. The shear strength of the solder joints containing 0.9 wt% TiO<sub>2</sub> decreased significantly more than that of the other groups after 28 days of corrosion. Based on first-principles calculations, the corrosion resistance of the solder joints can be enhanced by the formation of stable TiO<sub>2</sub>–Sn interface chemical bonds, which have a binding energy of 2.04 eV, within the Sn matrix through the incorporation of TiO<sub>2</sub> nanoparticles. However, the agglomeration effect of TiO<sub>2</sub> nanoparticles results in a substantial decrease in the effective bonding area between the Sn substrate and TiO<sub>2</sub> nanoparticles when the doping concentration surpasses the critical threshold. Consequently, the corrosion protection performance is substantially diminished.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145983012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Materials Science: Materials in Electronics
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1