This paper presents a large-signal SOI MOSFET model which explicitly includes self-heating effects. Our goal is to develop a model suitable for SOI monolithic microwave IC (MMIC) design which clearly requires a large-signal model accurate at high frequencies. In addition, the model must include the dynamic thermal response of the device since MMICs often contain microwave, RF, baseband, and bias sections spanning the range from DC to several GHz. At DC, self-heating can be modeled with a simple thermal resistance, while at microwave frequencies the temperature is effectively constant. However, at intermediate frequencies the temperature lags the applied power so the model must accurately represent the thermal dynamics in the device.
{"title":"A large-signal model for SOI MOSFETs including dynamic self-heating effects","authors":"A. Caviglia, A. Iliadis","doi":"10.1109/SOI.1995.526438","DOIUrl":"https://doi.org/10.1109/SOI.1995.526438","url":null,"abstract":"This paper presents a large-signal SOI MOSFET model which explicitly includes self-heating effects. Our goal is to develop a model suitable for SOI monolithic microwave IC (MMIC) design which clearly requires a large-signal model accurate at high frequencies. In addition, the model must include the dynamic thermal response of the device since MMICs often contain microwave, RF, baseband, and bias sections spanning the range from DC to several GHz. At DC, self-heating can be modeled with a simple thermal resistance, while at microwave frequencies the temperature is effectively constant. However, at intermediate frequencies the temperature lags the applied power so the model must accurately represent the thermal dynamics in the device.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120911554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Optical waveguiding in BESOI (Bond and Etch back Silicon On Insulator) structures is investigated as a command tool for microwave signal transmission in coplanar lines. This paper reports the formation and the propagation characteristics of an optoelectronic microwave microswitch.
研究了BESOI (Bond and Etch back Silicon On Insulator)结构中的光波导作为共面线中微波信号传输的指挥工具。本文报道了一种光电微波微动开关的形成及其传播特性。
{"title":"Optoelectronic microswitch on SOI based structure","authors":"S. Chouteau, J. Boussey, B. Cabon, A. Iliadis","doi":"10.1109/SOI.1995.526450","DOIUrl":"https://doi.org/10.1109/SOI.1995.526450","url":null,"abstract":"Optical waveguiding in BESOI (Bond and Etch back Silicon On Insulator) structures is investigated as a command tool for microwave signal transmission in coplanar lines. This paper reports the formation and the propagation characteristics of an optoelectronic microwave microswitch.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124848618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We analyzed the impact of supplemental oxygen implantation and subsequent annealing at 1100/spl deg/C on standard separation-by-implantation-of-oxygen (SIMOX) material, by looking at inherent defects in SIMOX, using low temperature K-band electron spin resonance (ESR). These defects include E/sub /spl gamma//', E/sub /spl delta//', both oxygen-deficiency centers in the buried oxide (BOX). Also, hydrogen-induced positive charge centers in the BOX, and an oxygen-related shallow donor in the Si, both close to the two BOX/Si interfaces, were studied. Our main conclusion is that the supplemental oxygen implant significantly reduces the E' generation sensitivity of the BOX. The oxygen related shallow donor density on the other hand, was found to increase by up to a factor of 6.
{"title":"Paramagnetic defects in SIMOX with supplemental implantation of oxygen","authors":"K. Vanheusden, A. Stesmans","doi":"10.1109/SOI.1995.526509","DOIUrl":"https://doi.org/10.1109/SOI.1995.526509","url":null,"abstract":"We analyzed the impact of supplemental oxygen implantation and subsequent annealing at 1100/spl deg/C on standard separation-by-implantation-of-oxygen (SIMOX) material, by looking at inherent defects in SIMOX, using low temperature K-band electron spin resonance (ESR). These defects include E/sub /spl gamma//', E/sub /spl delta//', both oxygen-deficiency centers in the buried oxide (BOX). Also, hydrogen-induced positive charge centers in the BOX, and an oxygen-related shallow donor in the Si, both close to the two BOX/Si interfaces, were studied. Our main conclusion is that the supplemental oxygen implant significantly reduces the E' generation sensitivity of the BOX. The oxygen related shallow donor density on the other hand, was found to increase by up to a factor of 6.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125081574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.
{"title":"A high performance lateral bipolar transistor from a SOI CMOS process","authors":"M. Chan, S. Fung, C. Hu, P. Ko","doi":"10.1109/SOI.1995.526475","DOIUrl":"https://doi.org/10.1109/SOI.1995.526475","url":null,"abstract":"A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127588471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kikuchi, T. Hamajima, K. Kobayashi, M. Takashi, K. Arai
Intelligent power ICs with vertical double-diffused MOS (VDMOS) output devices are used for solenoid controlled applications. Many structures have been proposed for these power ICs. We have developed poly-Si sandwiched bonded (PSB) structures which use a Sb doped poly-Si and crystal-Si bonding technique. However these PSB structures have a high fabrication cost, because the fabrication process includes Sb diffusion into poly-Si layers. In this paper, we first propose an improved fabrication process of PSB structures without Sb diffusion into poly-Si layers. Second, we propose a new SOI structure with gaps fabricated by a wafer direct bonding technique. Both structures enable us to obtain low-cost intelligent power ICs with VDMOS.
{"title":"New SOI structures for intelligent power ICs with vertical double-diffused MOS output devices","authors":"H. Kikuchi, T. Hamajima, K. Kobayashi, M. Takashi, K. Arai","doi":"10.1109/SOI.1995.526496","DOIUrl":"https://doi.org/10.1109/SOI.1995.526496","url":null,"abstract":"Intelligent power ICs with vertical double-diffused MOS (VDMOS) output devices are used for solenoid controlled applications. Many structures have been proposed for these power ICs. We have developed poly-Si sandwiched bonded (PSB) structures which use a Sb doped poly-Si and crystal-Si bonding technique. However these PSB structures have a high fabrication cost, because the fabrication process includes Sb diffusion into poly-Si layers. In this paper, we first propose an improved fabrication process of PSB structures without Sb diffusion into poly-Si layers. Second, we propose a new SOI structure with gaps fabricated by a wafer direct bonding technique. Both structures enable us to obtain low-cost intelligent power ICs with VDMOS.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125389499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Mendicino, R. Reyes, T. Boden, K. Huffman, P. Vasudev
The results of this work show that buried oxide (BOX) conducting defects in SIMOX wafers can be detected and spatially localized even in capacitors with areas approaching 1cm/sup 2/. The defects in this work were typically isolated to areas of about 2/spl mu/m/sup 2/. Preliminary cross-sectional TEM results show very little structural deformation of the BOX in the area of the conducting defects. To our knowledge, this is the first report of identification of naturally occurring BOX conducting defects in state-of-the-art SIMOX material. In addition, this analysis should reveal the cause of the conducting defects and accelerate their elimination.
{"title":"Identification of low density buried oxide conducting defects in SIMOX","authors":"M. Mendicino, R. Reyes, T. Boden, K. Huffman, P. Vasudev","doi":"10.1109/SOI.1995.526510","DOIUrl":"https://doi.org/10.1109/SOI.1995.526510","url":null,"abstract":"The results of this work show that buried oxide (BOX) conducting defects in SIMOX wafers can be detected and spatially localized even in capacitors with areas approaching 1cm/sup 2/. The defects in this work were typically isolated to areas of about 2/spl mu/m/sup 2/. Preliminary cross-sectional TEM results show very little structural deformation of the BOX in the area of the conducting defects. To our knowledge, this is the first report of identification of naturally occurring BOX conducting defects in state-of-the-art SIMOX material. In addition, this analysis should reveal the cause of the conducting defects and accelerate their elimination.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124691609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects.
{"title":"Improved BESOI substrates for high speed ICs","authors":"A. Plettner, K. Haberger, K. Neumeier","doi":"10.1109/SOI.1995.526465","DOIUrl":"https://doi.org/10.1109/SOI.1995.526465","url":null,"abstract":"A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128472595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime.
{"title":"Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET's","authors":"A. Wei, M. Sherony, D. Antoniadis","doi":"10.1109/SOI.1995.526433","DOIUrl":"https://doi.org/10.1109/SOI.1995.526433","url":null,"abstract":"This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"291 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128591550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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