Shuai Huang, Junfan Hua, Kunpeng Su, Lin Yang, Haiou Wang, Canglong Li
Using purely electrical methods to manipulate magnetic property poses a significant obstacle in the development of advanced information technology. Multiferroic materials, distinguished by their magnetoelectric (ME) effect, offer a promising way to overcome this challenge by enabling the electric control of magnetic ordering or magnetization. Here, we have synthesized Cu3Mo2O9 single crystals and investigated the anisotropic ME effect within the quasi-one-dimensional spin system. The simultaneous occurrence of ferroelectric (FE) polarization and dielectric anomaly at the Néel temperature (TN) of ∼7.9 K suggests the presence of spin-driven FE property in Cu3Mo2O9. The phase transition temperatures undergo a shift toward lower values for H//c and remain constant for H//a and H//b, indicating anisotropic ME effect. The ME effect demonstrates nonlinear behavior as the magnetic field increases. Near a critical point (T = 7 K and μ0H = 5.6 T), a giant magnetodielectric coupling parameter reaching 374% is observed for H//c, which can be ascribed to the strong spin–phonon coupling and the magnetic field induced change of FE polarization. In the context of charge redistribution without magnetic superlattice, the FE property is analyzed. Moreover, remarkable magnetic control of FE polarization and electric control of magnetization are obtained. The temporal evolution of both polarization and magnetization indicates the stable ME mutual control, suggesting potential applications of Cu3Mo2O9 as a promising multiferroic material.
{"title":"Anisotropic magnetoelectric effect in quasi-one-dimensional antiferromagnet Cu3Mo2O9","authors":"Shuai Huang, Junfan Hua, Kunpeng Su, Lin Yang, Haiou Wang, Canglong Li","doi":"10.1063/5.0243143","DOIUrl":"https://doi.org/10.1063/5.0243143","url":null,"abstract":"Using purely electrical methods to manipulate magnetic property poses a significant obstacle in the development of advanced information technology. Multiferroic materials, distinguished by their magnetoelectric (ME) effect, offer a promising way to overcome this challenge by enabling the electric control of magnetic ordering or magnetization. Here, we have synthesized Cu3Mo2O9 single crystals and investigated the anisotropic ME effect within the quasi-one-dimensional spin system. The simultaneous occurrence of ferroelectric (FE) polarization and dielectric anomaly at the Néel temperature (TN) of ∼7.9 K suggests the presence of spin-driven FE property in Cu3Mo2O9. The phase transition temperatures undergo a shift toward lower values for H//c and remain constant for H//a and H//b, indicating anisotropic ME effect. The ME effect demonstrates nonlinear behavior as the magnetic field increases. Near a critical point (T = 7 K and μ0H = 5.6 T), a giant magnetodielectric coupling parameter reaching 374% is observed for H//c, which can be ascribed to the strong spin–phonon coupling and the magnetic field induced change of FE polarization. In the context of charge redistribution without magnetic superlattice, the FE property is analyzed. Moreover, remarkable magnetic control of FE polarization and electric control of magnetization are obtained. The temporal evolution of both polarization and magnetization indicates the stable ME mutual control, suggesting potential applications of Cu3Mo2O9 as a promising multiferroic material.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck
Copper(I) iodide, CuI, is the leading p-type nontoxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and, therefore, the thermoelectric performance of a material. As a result of defect engineering, the power factor of thin film CuI was increased from 332±32 to 578±58 μW m−1K−2 after implantation with noble gas ions (Ne, Ar, or Xe). The increased power factor is due to a decoupling of the Seebeck coefficient and electrical conductivity identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to suppress compensating donors in CuI, and this scenario was also supported by density functional theory calculations. The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from 6.5×1019±0.1×1019 to 11.5×1019±0.4×1019 cm−3. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation.
{"title":"Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation","authors":"Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck","doi":"10.1063/5.0233754","DOIUrl":"https://doi.org/10.1063/5.0233754","url":null,"abstract":"Copper(I) iodide, CuI, is the leading p-type nontoxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and, therefore, the thermoelectric performance of a material. As a result of defect engineering, the power factor of thin film CuI was increased from 332±32 to 578±58 μW m−1K−2 after implantation with noble gas ions (Ne, Ar, or Xe). The increased power factor is due to a decoupling of the Seebeck coefficient and electrical conductivity identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to suppress compensating donors in CuI, and this scenario was also supported by density functional theory calculations. The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from 6.5×1019±0.1×1019 to 11.5×1019±0.4×1019 cm−3. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"13 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lin Wei, Zhaojiang You, Xinmiao Meng, Yuanyuan Fang, Aisen Li, Shourui Li, Kai Wang, Qian Li
Exciton engineering in two-dimensional (2D) hybrid metal halide perovskites (HMHPs) is crucial for optimizing photoluminescent (PL) and photocurrent (PC) properties, yet it remains a great challenge. In this work, high pressure is applied to accurately control the conversion equilibrium among free carriers (FCs), free excitons (FEs), and trapped excitons in 2D HMHPs of 10% Pb2+-doped BDACdBr4 (BDA = 1, 4-butanediamine). Initial compression induces noticeable interlayer approach and limited intralayer distortion. Reduced self-trapping energy facilitates reverse intersystem crossing of self-trapped excitons (STEs), leading to visible PL transformation from STE to FE emission. Under sufficient compression, phase transition occurs, and significant structural distortions are accompanied by further exciton release. The FE emission is enhanced with more symmetric line shape, achieving intense deep-blue emission that meets the international specification of deep-blue display. Sufficiently decreased binding energy also promotes the dissociation of FEs to simultaneously enhance PC property.
{"title":"High-pressure exciton engineering in two-dimensional metal halide perovskite toward intense deep-blue emission and regulated photocurrent property","authors":"Lin Wei, Zhaojiang You, Xinmiao Meng, Yuanyuan Fang, Aisen Li, Shourui Li, Kai Wang, Qian Li","doi":"10.1063/5.0235038","DOIUrl":"https://doi.org/10.1063/5.0235038","url":null,"abstract":"Exciton engineering in two-dimensional (2D) hybrid metal halide perovskites (HMHPs) is crucial for optimizing photoluminescent (PL) and photocurrent (PC) properties, yet it remains a great challenge. In this work, high pressure is applied to accurately control the conversion equilibrium among free carriers (FCs), free excitons (FEs), and trapped excitons in 2D HMHPs of 10% Pb2+-doped BDACdBr4 (BDA = 1, 4-butanediamine). Initial compression induces noticeable interlayer approach and limited intralayer distortion. Reduced self-trapping energy facilitates reverse intersystem crossing of self-trapped excitons (STEs), leading to visible PL transformation from STE to FE emission. Under sufficient compression, phase transition occurs, and significant structural distortions are accompanied by further exciton release. The FE emission is enhanced with more symmetric line shape, achieving intense deep-blue emission that meets the international specification of deep-blue display. Sufficiently decreased binding energy also promotes the dissociation of FEs to simultaneously enhance PC property.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"56 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Adan Azem, Dmitry V. Morozov, Daniel Kuznesof, Ciro Bruscino, Robert H. Hadfield, Lukas Chrostowski, Jeff F. Young
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.
超导纳米线单光子探测器被广泛用于探测从紫外线到近红外各种波长的单个光子。最近，在量子通信、光谱学和天体物理学应用的推动下，人们对提高超导纳米线单光子探测器对中红外光谱中单光子的灵敏度越来越感兴趣。在此，我们介绍了如何将基于 U 型铌钛氮超导纳米线单光子探测器的光谱探测能力扩展到中红外范围。我们展示了厚度为 5 nm、宽度为 50 nm 的铌钛纳米线的饱和内部探测效率，其波长可达 3.5 μm，在 0.9 K 时的暗计数率小于每秒 10 个计数，快速恢复时间为 4.3 ns。该探测器可集成在绝缘体硅平台的波导上，用于紧凑型多通道器件应用。
{"title":"Mid-infrared characterization of NbTiN superconducting nanowire single-photon detectors on silicon-on-insulator","authors":"Adan Azem, Dmitry V. Morozov, Daniel Kuznesof, Ciro Bruscino, Robert H. Hadfield, Lukas Chrostowski, Jeff F. Young","doi":"10.1063/5.0237005","DOIUrl":"https://doi.org/10.1063/5.0237005","url":null,"abstract":"Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"168 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-18DOI: 10.1038/s41567-024-02676-w
Youngshin Kim, Alfonso Lanuza, Dominik Schneble
The cooperative modification of spontaneous radiative decay exemplifies a many-emitter effect in quantum optics. So far, its experimental realizations have relied on interactions mediated by rapidly escaping photons, which do not play an active role in the emitter dynamics. Here we use a platform of ultracold atoms in a one-dimensional optical lattice geometry to explore cooperative non-Markovian dynamics of synthetic quantum emitters that decay by radiating slow atomic matter waves. By preparing and manipulating arrays of emitters hosting weakly and strongly interacting many-body phases of excitations, we demonstrate directional collective emission and study the interplay between retardation and super- and subradiant dynamics. Moreover, we directly observe the spontaneous buildup of coherence among emitters. Our results on collective radiative dynamics establish ultracold matter waves as a versatile tool for studying many-body quantum optics in spatially extended and ordered systems.
{"title":"Super- and subradiant dynamics of quantum emitters mediated by atomic matter waves","authors":"Youngshin Kim, Alfonso Lanuza, Dominik Schneble","doi":"10.1038/s41567-024-02676-w","DOIUrl":"https://doi.org/10.1038/s41567-024-02676-w","url":null,"abstract":"<p>The cooperative modification of spontaneous radiative decay exemplifies a many-emitter effect in quantum optics. So far, its experimental realizations have relied on interactions mediated by rapidly escaping photons, which do not play an active role in the emitter dynamics. Here we use a platform of ultracold atoms in a one-dimensional optical lattice geometry to explore cooperative non-Markovian dynamics of synthetic quantum emitters that decay by radiating slow atomic matter waves. By preparing and manipulating arrays of emitters hosting weakly and strongly interacting many-body phases of excitations, we demonstrate directional collective emission and study the interplay between retardation and super- and subradiant dynamics. Moreover, we directly observe the spontaneous buildup of coherence among emitters. Our results on collective radiative dynamics establish ultracold matter waves as a versatile tool for studying many-body quantum optics in spatially extended and ordered systems.</p>","PeriodicalId":19100,"journal":{"name":"Nature Physics","volume":"8 1","pages":""},"PeriodicalIF":19.6,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Tanvir Hasan, Jiangnan Liu, Ding Wang, Shubham Mondal, Md Mehedi Hasan Tanim, Samuel Yang, Zetian Mi
We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier, nearly lattice matched to the GaN channel, showed a drain current reduction of ∼50% at 700 K. The decrease in 2DEG mobility, which leads to an increase in sheet resistance, is mostly responsible for this reduction in drain current. However, an excellent electrostatic control was achieved at 700 K with the drain current value exceeding 1 A/mm, which is 2 times higher compared to that of AlGaN/GaN HEMTs reported previously. These results indicate that ScAlN/GaN HEMTs are a promising candidate for high-temperature and high-power electronic applications.
{"title":"Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor","authors":"Md Tanvir Hasan, Jiangnan Liu, Ding Wang, Shubham Mondal, Md Mehedi Hasan Tanim, Samuel Yang, Zetian Mi","doi":"10.1063/5.0239643","DOIUrl":"https://doi.org/10.1063/5.0239643","url":null,"abstract":"We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier, nearly lattice matched to the GaN channel, showed a drain current reduction of ∼50% at 700 K. The decrease in 2DEG mobility, which leads to an increase in sheet resistance, is mostly responsible for this reduction in drain current. However, an excellent electrostatic control was achieved at 700 K with the drain current value exceeding 1 A/mm, which is 2 times higher compared to that of AlGaN/GaN HEMTs reported previously. These results indicate that ScAlN/GaN HEMTs are a promising candidate for high-temperature and high-power electronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Smart actuators convert environmental changes into mechanical energy. However, the actuation performance and robustness of smart actuators are limited by the weak interlaminar force and poor adhesion between layers. Herein, we report moisture-responsive actuators integrated with slippery liquid-infused porous surfaces (SLIPSs). The difference in adsorption capacity of water molecules further increases because the SLIPS layer is isolated from air by the lubricating oil film. Compared with the initial (graphene oxide/candle soot, GO/CS) bilayer film, the integrated SLIPS layer improved the bending performance by 12.6% and shortened the response–recovery time by one-third. Moreover, the GO/SLIPS actuator exhibited excellent long-term stability over 10 000 cycles due to the lubricating oil's capillary fluidity. In addition, a moisture-controlled water-transport device based on a GO/SLIPS film was demonstrated.
{"title":"Slippery liquid-infused porous surfaces for high-performance moisture-responsive actuators","authors":"Zhao-Di Chen, Qiang Wang, Hao Zhou, Xi-Lin Li, Tian-Tai Zhang, Dong-Dong Han, Yong-Lai Zhang","doi":"10.1063/5.0233616","DOIUrl":"https://doi.org/10.1063/5.0233616","url":null,"abstract":"Smart actuators convert environmental changes into mechanical energy. However, the actuation performance and robustness of smart actuators are limited by the weak interlaminar force and poor adhesion between layers. Herein, we report moisture-responsive actuators integrated with slippery liquid-infused porous surfaces (SLIPSs). The difference in adsorption capacity of water molecules further increases because the SLIPS layer is isolated from air by the lubricating oil film. Compared with the initial (graphene oxide/candle soot, GO/CS) bilayer film, the integrated SLIPS layer improved the bending performance by 12.6% and shortened the response–recovery time by one-third. Moreover, the GO/SLIPS actuator exhibited excellent long-term stability over 10 000 cycles due to the lubricating oil's capillary fluidity. In addition, a moisture-controlled water-transport device based on a GO/SLIPS film was demonstrated.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Feixuan Huang, Mingye Du, Chen Ma, Xi He, Feiya Suo, Jiawei Li, Tao Wu, Nan Wang
In this paper, a high-frequency lamb wave resonator (LWR) with near zero temperature coefficient of frequency (TCF) is designed, fabricated, and measured. The reported resonator is of a bi-layer structure consisting of lithium niobate (LiNbO3 or LN) and silicon dioxide (SiO2), and lithographically patterned aluminum (Al) inter-digitated electrode fingers on top of the bi-layer structure. By adjusting the thickness ratio of LN and SiO2 layers, both the electromechanical coupling (k2) and the TCF, including both TCF at resonant frequency (TCFr) and TCF at anti-resonant frequency (TCFa), of the thickness shear (TS) type LWR are optimized. Experimental results, which are in excellent agreement with theoretical analysis, show that the fabricated 11.6-GHz LWR achieves a k2 of 12.2%, with TCFr and TCFa being −4.2 and −5.4 ppm/K over a temperature range from 30 °C to 85 °C, respectively, demonstrating huge potential in applications for future wireless communication systems above 10 GHz.
{"title":"Near-zero TCF 11.6-GHz lamb wave resonator based on 128°Y-cut LiNbO3","authors":"Feixuan Huang, Mingye Du, Chen Ma, Xi He, Feiya Suo, Jiawei Li, Tao Wu, Nan Wang","doi":"10.1063/5.0233718","DOIUrl":"https://doi.org/10.1063/5.0233718","url":null,"abstract":"In this paper, a high-frequency lamb wave resonator (LWR) with near zero temperature coefficient of frequency (TCF) is designed, fabricated, and measured. The reported resonator is of a bi-layer structure consisting of lithium niobate (LiNbO3 or LN) and silicon dioxide (SiO2), and lithographically patterned aluminum (Al) inter-digitated electrode fingers on top of the bi-layer structure. By adjusting the thickness ratio of LN and SiO2 layers, both the electromechanical coupling (k2) and the TCF, including both TCF at resonant frequency (TCFr) and TCF at anti-resonant frequency (TCFa), of the thickness shear (TS) type LWR are optimized. Experimental results, which are in excellent agreement with theoretical analysis, show that the fabricated 11.6-GHz LWR achieves a k2 of 12.2%, with TCFr and TCFa being −4.2 and −5.4 ppm/K over a temperature range from 30 °C to 85 °C, respectively, demonstrating huge potential in applications for future wireless communication systems above 10 GHz.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"64 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Strongly coupled exciton-polaritons can be observed in a wide variety of systems and exhibit remarkable properties due to their small mass, compared to that of electrons, and their bosonic nature. This allows to study quantum condensates and can be exploited for photonic integrated circuits. For the latter one, the small propagation length of the polaritons in microcavities often comprises a limiting factor. By using evanescent guided modes as the photonic component instead of cavity photons, the polaritons inherit longer lifetimes. In this work, we report on the observation of propagating polaritons, consisting of interacting Bloch surface waves and excitons in ZnO, at room temperature and find energy dependent propagation lengths of up to 100 μm. These results open the path to applying Bloch polaritons in on-chip polaritonic devices requiring macroscopic propagation at or above room temperature.
{"title":"Long-range propagation of Bloch surface wave polaritons in ZnO","authors":"S. Henn, A. Müller, M. Grundmann, C. Sturm","doi":"10.1063/5.0233279","DOIUrl":"https://doi.org/10.1063/5.0233279","url":null,"abstract":"Strongly coupled exciton-polaritons can be observed in a wide variety of systems and exhibit remarkable properties due to their small mass, compared to that of electrons, and their bosonic nature. This allows to study quantum condensates and can be exploited for photonic integrated circuits. For the latter one, the small propagation length of the polaritons in microcavities often comprises a limiting factor. By using evanescent guided modes as the photonic component instead of cavity photons, the polaritons inherit longer lifetimes. In this work, we report on the observation of propagating polaritons, consisting of interacting Bloch surface waves and excitons in ZnO, at room temperature and find energy dependent propagation lengths of up to 100 μm. These results open the path to applying Bloch polaritons in on-chip polaritonic devices requiring macroscopic propagation at or above room temperature.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ze-Hua Cao, Xi Wang, Rong-Jiang Zhu, Zi-Yang Liu, Ming Xu, Hao Tong, Qiang He, Xiang-Shui Miao
As one of the most promising candidates for next-generation nonvolatile memory, phase change memory is still facing the problem of high power consumption required to reset the device. The melt-quench process during amorphization leads to thermal crosstalk between devices as well. In this work, a paired pulses (P.P.) RESET operation scheme has been demonstrated to reduce the maximum temperature during the amorphization process, which in turn significantly reduces the power consumption. Experiments show that both the minimum RESET programming voltage and power consumption have decreased by up to 0.4 V and 60%, respectively. This proposed programming strategy is promising to optimize the device endurance and stability without sacrificing operating speed.
{"title":"Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme","authors":"Ze-Hua Cao, Xi Wang, Rong-Jiang Zhu, Zi-Yang Liu, Ming Xu, Hao Tong, Qiang He, Xiang-Shui Miao","doi":"10.1063/5.0234139","DOIUrl":"https://doi.org/10.1063/5.0234139","url":null,"abstract":"As one of the most promising candidates for next-generation nonvolatile memory, phase change memory is still facing the problem of high power consumption required to reset the device. The melt-quench process during amorphization leads to thermal crosstalk between devices as well. In this work, a paired pulses (P.P.) RESET operation scheme has been demonstrated to reduce the maximum temperature during the amorphization process, which in turn significantly reduces the power consumption. Experiments show that both the minimum RESET programming voltage and power consumption have decreased by up to 0.4 V and 60%, respectively. This proposed programming strategy is promising to optimize the device endurance and stability without sacrificing operating speed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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