The competition between interlayer rumpling and rotations is crucial for understanding the origin of hybrid improper ferroelectricity for Ruddlesden–Popper (RP) oxides, but the corresponding relationship is still unclear in the RP nitrides. Inspired by the recent experimental synthesis of RP layered nitrides, we explore competitive relationships of distortion modes in La3W2N7 and the strategies for enhancing the polar modes. The results show that although the potential energy surface of the rumpling mode presents a single-well shape, it can enhance the stability of both the polar and antipolar coupling modes. The antipolar coupling mode is more energy preferable, so the stable La3W2N7 is a centrosymmetric structure with the space group Pnma. We further enhance the rumpling distortion through the interface atomic substitution strategy, making the polar coupling mode more dominant in the (LaY2)W2N7, resulting in a non-centrosymmetric ground state structure. The analysis of electronic structure and electrostatic potential indicates that the electrostatic potential differences between the rock salt and perovskite layers strengthen the amplitude of the rumpling mode and the Jahn–Teller distortion of the [WN6] octahedron. Our study provides a viable strategy for designing non-centrosymmetric n = 2 RP layered nitrides and offers a promising pathway toward the future development of nitride-based ferroelectric and multiferroic materials.
{"title":"Controlling the competition between polar and antipolar structures by rumpling in Ruddlesden–Popper layered nitride La3W2N7","authors":"Zun-Yi Deng, Gang Tang, Jiawang Hong","doi":"10.1063/5.0312314","DOIUrl":"https://doi.org/10.1063/5.0312314","url":null,"abstract":"The competition between interlayer rumpling and rotations is crucial for understanding the origin of hybrid improper ferroelectricity for Ruddlesden–Popper (RP) oxides, but the corresponding relationship is still unclear in the RP nitrides. Inspired by the recent experimental synthesis of RP layered nitrides, we explore competitive relationships of distortion modes in La3W2N7 and the strategies for enhancing the polar modes. The results show that although the potential energy surface of the rumpling mode presents a single-well shape, it can enhance the stability of both the polar and antipolar coupling modes. The antipolar coupling mode is more energy preferable, so the stable La3W2N7 is a centrosymmetric structure with the space group Pnma. We further enhance the rumpling distortion through the interface atomic substitution strategy, making the polar coupling mode more dominant in the (LaY2)W2N7, resulting in a non-centrosymmetric ground state structure. The analysis of electronic structure and electrostatic potential indicates that the electrostatic potential differences between the rock salt and perovskite layers strengthen the amplitude of the rumpling mode and the Jahn–Teller distortion of the [WN6] octahedron. Our study provides a viable strategy for designing non-centrosymmetric n = 2 RP layered nitrides and offers a promising pathway toward the future development of nitride-based ferroelectric and multiferroic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal conductivity of a ∼5 μm-thick diamond film grown on SiC by hot filament chemical vapor deposition (HFCVD) using square-pulsed source thermometry. Electron backscatter diffraction and transmission electron microscopy reveal pronounced grain coarsening from the nucleation interface to the film surface. By combining frequency-dependent thermal penetration with a depth-resolved thermal transport model, we quantitatively reconstruct the thermal conductivity profile. The thermal conductivity increases sharply from ∼60 W m−1 K−1 near the nucleation region to ∼200 W m−1 K−1 at the surface, directly reflecting the underlying microstructural evolution. These results provide a physically grounded understanding of graded heat transport in HFCVD diamond and offer practical guidance for engineering diamond-based thermal management layers for next-generation power devices.
将高导热金刚石薄膜集成到碳化硅（SiC）衬底上，为大功率电子器件的热管理提供了一条有前途的途径。在这里，我们使用方形脉冲源测温技术研究了热丝化学气相沉积（HFCVD）在SiC上生长的~ 5 μm厚的金刚石薄膜的深度相关热导率。电子背散射衍射和透射电镜显示，从成核界面到薄膜表面晶粒明显变粗。通过结合频率相关的热渗透和深度分辨的热输运模型，我们定量地重建了导热系数剖面。热导率从成核区附近的~ 60 W m−1 K−1急剧增加到表面的~ 200 W m−1 K−1，直接反映了潜在的微观结构演变。这些结果为HFCVD金刚石中的梯度热传输提供了物理基础的理解，并为下一代功率器件的工程金刚石热管理层提供了实用指导。
{"title":"Depth-resolved thermal conductivity of HFCVD diamond films via square-pulsed thermometry","authors":"Kexin Zhang, Xiaosong Han, Ershuai Yin, Xin Qian, Junjun Wei, Puqing Jiang","doi":"10.1063/5.0314415","DOIUrl":"https://doi.org/10.1063/5.0314415","url":null,"abstract":"The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal conductivity of a ∼5 μm-thick diamond film grown on SiC by hot filament chemical vapor deposition (HFCVD) using square-pulsed source thermometry. Electron backscatter diffraction and transmission electron microscopy reveal pronounced grain coarsening from the nucleation interface to the film surface. By combining frequency-dependent thermal penetration with a depth-resolved thermal transport model, we quantitatively reconstruct the thermal conductivity profile. The thermal conductivity increases sharply from ∼60 W m−1 K−1 near the nucleation region to ∼200 W m−1 K−1 at the surface, directly reflecting the underlying microstructural evolution. These results provide a physically grounded understanding of graded heat transport in HFCVD diamond and offer practical guidance for engineering diamond-based thermal management layers for next-generation power devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"84 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Orbital torque (OT) harnesses orbital currents to electrically encode spin states, offering a promising route toward low-power spintronic devices. However, the microscopic mechanisms governing OT efficiency remain elusive. Here, we employ Ru, a light metal possessing positive spin and orbital Hall conductivities, as an orbital source to switch perpendicularly magnetized [Co/Pt]3 multilayers with a negative orbital-to-spin conversion coefficient. This configuration enables a clear separation between OT and conventional spin–orbit torque. We find that the OT efficiency decreases monotonically with increasing Ru thickness, confirming an interfacial rather than bulk origin of the orbital current. Notably, robust magnetization switching persists even for a Ru thickness of only 1 nm, achieving a critical switching current density of 1.9 × 107 A/cm2, nearly half that of the heavy-metal Pt reference. These findings not only elucidate the physical mechanism of OT but also establish key design principles for the development of energy-efficient orbitronic memory devices.
轨道转矩（OT）利用轨道电流对自旋态进行电编码，为低功率自旋电子器件提供了一条有前途的途径。然而，控制OT效率的微观机制仍然难以捉摸。在这里，我们使用Ru，一种具有正自旋和轨道霍尔电导率的轻金属，作为轨道源来切换具有负轨道自旋转换系数的垂直磁化[Co/Pt]3多层膜。这种配置使得OT和传统的自旋-轨道扭矩之间有了明确的分离。我们发现，随着Ru厚度的增加，OT效率单调下降，这证实了轨道电流的界面来源，而不是整体来源。值得注意的是，即使Ru厚度仅为1 nm，稳健的磁化开关也能持续存在，达到1.9 × 107 a /cm2的临界开关电流密度，几乎是重金属Pt参考材料的一半。这些发现不仅阐明了OT的物理机制，而且为开发节能的轨道电子存储器件建立了关键的设计原则。
{"title":"Switching of perpendicular magnetization via orbital-current-induced torque from light metal Ru","authors":"Rui Hou, Jiasen Cao, Jinnan Liu, Yaohui Du, Bingyue Bian, Wenjie Wu, Min Wang, Mengyang Yan, Jia-Min Lai, Xinlong Dong, Zhengyu Xiao, Yakun Liu, Delin Zhang, Zhonghai Yu, Zhiyong Quan, Fei Wang, Xiaohong Xu","doi":"10.1063/5.0313505","DOIUrl":"https://doi.org/10.1063/5.0313505","url":null,"abstract":"Orbital torque (OT) harnesses orbital currents to electrically encode spin states, offering a promising route toward low-power spintronic devices. However, the microscopic mechanisms governing OT efficiency remain elusive. Here, we employ Ru, a light metal possessing positive spin and orbital Hall conductivities, as an orbital source to switch perpendicularly magnetized [Co/Pt]3 multilayers with a negative orbital-to-spin conversion coefficient. This configuration enables a clear separation between OT and conventional spin–orbit torque. We find that the OT efficiency decreases monotonically with increasing Ru thickness, confirming an interfacial rather than bulk origin of the orbital current. Notably, robust magnetization switching persists even for a Ru thickness of only 1 nm, achieving a critical switching current density of 1.9 × 107 A/cm2, nearly half that of the heavy-metal Pt reference. These findings not only elucidate the physical mechanism of OT but also establish key design principles for the development of energy-efficient orbitronic memory devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
GaN high-electron mobility transistors (HEMTs) based on nitrogen-polar (N-polar) nitride films are promising for high-frequency millimeter-wave applications. However, realizing high-mobility N-polar GaN/AlGaN heterostructures by metal-organic chemical vapor deposition (MOCVD) remains challenging. In this work, N-polar GaN/AlGaN heterostructures are grown on SiC substrates by MOCVD. By lowering the growth temperature of the high-resistance GaN (HR-GaN) template layer, the two-dimensional electron gas (2DEG) mobility is significantly increased to 1947 cm2/V s, the highest value reported for N-polar GaN/AlGaN heterostructures on SiC. The mobility enhancement is primarily attributed to the effective reduction of oxygen impurity concentration in N-polar heterostructures at lower growth temperature of HR-GaN, leading to weakened ionized impurity scattering toward 2DEG. Importantly, reducing the growth temperature of HR-GaN also substantially increases its sheet resistance, which not only suppresses leakage current of N-polar HEMTs, but also contributes partially to the 2DEG mobility enhancement. This work presents an effective approach for enhancing the mobility of N-polar heterostructures, which is beneficial for the development of high-performance millimeter-wave N-polar GaN HEMT devices.
{"title":"High-mobility nitrogen-polar GaN/AlGaN heterostructures via impurity modulation","authors":"Haotian Ma, Gaoqiang Deng, Shixu Yang, Yusen Wang, Jingkai Zhao, Changcai Zuo, Yi Li, Haozhe Gao, Yuliang Liu, Xiang Lin, Tianpeng Yang, Yuantao Zhang","doi":"10.1063/5.0313847","DOIUrl":"https://doi.org/10.1063/5.0313847","url":null,"abstract":"GaN high-electron mobility transistors (HEMTs) based on nitrogen-polar (N-polar) nitride films are promising for high-frequency millimeter-wave applications. However, realizing high-mobility N-polar GaN/AlGaN heterostructures by metal-organic chemical vapor deposition (MOCVD) remains challenging. In this work, N-polar GaN/AlGaN heterostructures are grown on SiC substrates by MOCVD. By lowering the growth temperature of the high-resistance GaN (HR-GaN) template layer, the two-dimensional electron gas (2DEG) mobility is significantly increased to 1947 cm2/V s, the highest value reported for N-polar GaN/AlGaN heterostructures on SiC. The mobility enhancement is primarily attributed to the effective reduction of oxygen impurity concentration in N-polar heterostructures at lower growth temperature of HR-GaN, leading to weakened ionized impurity scattering toward 2DEG. Importantly, reducing the growth temperature of HR-GaN also substantially increases its sheet resistance, which not only suppresses leakage current of N-polar HEMTs, but also contributes partially to the 2DEG mobility enhancement. This work presents an effective approach for enhancing the mobility of N-polar heterostructures, which is beneficial for the development of high-performance millimeter-wave N-polar GaN HEMT devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Anisotropic upper critical field beyond the Pauli limit in a nickelate superconductor: Evidence for a quantum fluctuation driven state","authors":"","doi":"10.1103/mmpn-gl8z","DOIUrl":"https://doi.org/10.1103/mmpn-gl8z","url":null,"abstract":"","PeriodicalId":20069,"journal":{"name":"Physical review letters","volume":"7 1","pages":""},"PeriodicalIF":8.6,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-17DOI: 10.1088/1475-7516/2026/02/057
Wen-Zheng Chen, Yang Liu, Yi-Ming Wang and Hong Li
Delensing — the process of mitigating the lensing-induced B-mode contamination in cosmic microwave background (CMB) observations — will be a pivotal challenge for next-generation CMB experiments seeking to detect primordial gravitational waves (PGWs) through B-mode polarization. This process requires an accurate lensing tracer, which can be obtained either through internal reconstruction from high-resolution CMB observations or from external large-scale structure (LSS) surveys. Ground-based large-aperture telescopes (LATs) are crucial for internal reconstruction, yet existing and planned facilities are confined to the southern hemisphere, limiting effective delensing to that region. In this work, we assess the impact of introducing a northern hemisphere LAT, assumed to be situated near AliCPT (hence termed Ali-like LAT, or LATN), on delensing performance and PGW detection, using simulations. Our baseline setup includes a space-based small-aperture mission (LiteBIRD-like, SAT) and a southern LAT (SO-like, LATS). External LSS tracers, which have been shown to play an important role in delensing before the availability of ultra-sensitive polarization data, are also considered. We find that southern-hemisphere internal delensing reduces the uncertainty in r by ∼17% compared to the no-delensing case. Adding LATN enables full-sky internal delensing, achieving a further ∼18% reduction — comparable to that from including LSS tracers (∼13%). Once LATN is included, the marginal benefit of LSS tracers drops to ∼10%. These results highlight the significant role of LATN in advancing delensing capabilities and improving PGW constraints.
{"title":"From south to north: leveraging ground-based LATs for full-sky CMB delensing and constraints on r","authors":"Wen-Zheng Chen, Yang Liu, Yi-Ming Wang and Hong Li","doi":"10.1088/1475-7516/2026/02/057","DOIUrl":"https://doi.org/10.1088/1475-7516/2026/02/057","url":null,"abstract":"Delensing — the process of mitigating the lensing-induced B-mode contamination in cosmic microwave background (CMB) observations — will be a pivotal challenge for next-generation CMB experiments seeking to detect primordial gravitational waves (PGWs) through B-mode polarization. This process requires an accurate lensing tracer, which can be obtained either through internal reconstruction from high-resolution CMB observations or from external large-scale structure (LSS) surveys. Ground-based large-aperture telescopes (LATs) are crucial for internal reconstruction, yet existing and planned facilities are confined to the southern hemisphere, limiting effective delensing to that region. In this work, we assess the impact of introducing a northern hemisphere LAT, assumed to be situated near AliCPT (hence termed Ali-like LAT, or LATN), on delensing performance and PGW detection, using simulations. Our baseline setup includes a space-based small-aperture mission (LiteBIRD-like, SAT) and a southern LAT (SO-like, LATS). External LSS tracers, which have been shown to play an important role in delensing before the availability of ultra-sensitive polarization data, are also considered. We find that southern-hemisphere internal delensing reduces the uncertainty in r by ∼17% compared to the no-delensing case. Adding LATN enables full-sky internal delensing, achieving a further ∼18% reduction — comparable to that from including LSS tracers (∼13%). Once LATN is included, the marginal benefit of LSS tracers drops to ∼10%. These results highlight the significant role of LATN in advancing delensing capabilities and improving PGW constraints.","PeriodicalId":15445,"journal":{"name":"Journal of Cosmology and Astroparticle Physics","volume":"11 1","pages":""},"PeriodicalIF":6.4,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146205626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-16DOI: 10.1109/TPS.2026.3661834
{"title":"Special Issue on Selected Papers from APSPT-14 May 2027","authors":"","doi":"10.1109/TPS.2026.3661834","DOIUrl":"https://doi.org/10.1109/TPS.2026.3661834","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"54 2","pages":"848-848"},"PeriodicalIF":1.5,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11397145","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146199236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-16DOI: 10.1021/acsphotonics.5c03034
Jiapeng Sun, Wei Jin, Jianwei Wang, Jiaxing Gao, Yuxin Liu, Yu Zhang, Lu Liu, Hanyang Li, Zhihai Liu
All-optical modulation and spectral encoding are significant for optical computing and information processing. However, the modulation level and efficiency of the traditional structure are limited by the size and uniformity of the modulation area and the insertion loss caused by on-chip coupling. A fiber optic integrated platform is proposed, which consists of single mode fiber (SMF), graded-index multimode fiber (GRIN-MMF), Ge2Sb2Te5 (GST)-coated microspheres, and a tapered fiber coupler. The interface between the SMF and MMF achieves spatial mode expansion through multimode interference, significantly enlarging the modulation spot and enhancing the light material interaction. The platform exhibits stable and reversible spectral modulation, with transmission fluctuations of 0.29 (amorphous state) and 0.68 dB (crystalline state) under repeated measurements. The GST switching process exhibits a fast response, with crystallization and amorphization times measured at 263 and 164 ns, respectively. By integrating two microspheres, we achieved all-optical encoding of English letters, numbers, and symbols, successfully writing the characters “All-optical”. Furthermore, a dual-microsphere array is configured to realize basic optical logic gates (AND/OR) and 2 × 2 matrix-vector multiplication. This work proposes an architecture for integrating modulation, storage, and computing on a fiber-based photonic platform that paves the way toward scalable neuromorphic and memory photonic systems.
{"title":"Fiber-Integrated Phase Change Microsphere System for Character Encoding and Matrix-Vector Multiplication","authors":"Jiapeng Sun, Wei Jin, Jianwei Wang, Jiaxing Gao, Yuxin Liu, Yu Zhang, Lu Liu, Hanyang Li, Zhihai Liu","doi":"10.1021/acsphotonics.5c03034","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c03034","url":null,"abstract":"All-optical modulation and spectral encoding are significant for optical computing and information processing. However, the modulation level and efficiency of the traditional structure are limited by the size and uniformity of the modulation area and the insertion loss caused by on-chip coupling. A fiber optic integrated platform is proposed, which consists of single mode fiber (SMF), graded-index multimode fiber (GRIN-MMF), Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST)-coated microspheres, and a tapered fiber coupler. The interface between the SMF and MMF achieves spatial mode expansion through multimode interference, significantly enlarging the modulation spot and enhancing the light material interaction. The platform exhibits stable and reversible spectral modulation, with transmission fluctuations of 0.29 (amorphous state) and 0.68 dB (crystalline state) under repeated measurements. The GST switching process exhibits a fast response, with crystallization and amorphization times measured at 263 and 164 ns, respectively. By integrating two microspheres, we achieved all-optical encoding of English letters, numbers, and symbols, successfully writing the characters “All-optical”. Furthermore, a dual-microsphere array is configured to realize basic optical logic gates (AND/OR) and 2 × 2 matrix-vector multiplication. This work proposes an architecture for integrating modulation, storage, and computing on a fiber-based photonic platform that paves the way toward scalable neuromorphic and memory photonic systems.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"230 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-16DOI: 10.1038/s41550-026-02776-y
{"title":"Link between long-period transients and white dwarf pulsars","authors":"","doi":"10.1038/s41550-026-02776-y","DOIUrl":"https://doi.org/10.1038/s41550-026-02776-y","url":null,"abstract":"","PeriodicalId":18778,"journal":{"name":"Nature Astronomy","volume":"7 1","pages":""},"PeriodicalIF":14.1,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146204949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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